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Voitsekhovskii, A. V., Nesmelov, S. N. (2007) Threshold characteristics of polycrystalline germanium silicide microbolometers. Russian Physics Journal, 50 (12). 1226-1231 doi:10.1007/s11182-008-9014-5

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Reference TypeJournal (article/letter/editorial)
TitleThreshold characteristics of polycrystalline germanium silicide microbolometers
JournalRussian Physics Journal
AuthorsVoitsekhovskii, A. V.Author
Nesmelov, S. N.Author
Year2007 (December)Volume50
Issue12
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-008-9014-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9034705Long-form Identifiermindat:1:5:9034705:8
GUID0
Full ReferenceVoitsekhovskii, A. V., Nesmelov, S. N. (2007) Threshold characteristics of polycrystalline germanium silicide microbolometers. Russian Physics Journal, 50 (12). 1226-1231 doi:10.1007/s11182-008-9014-5
Plain TextVoitsekhovskii, A. V., Nesmelov, S. N. (2007) Threshold characteristics of polycrystalline germanium silicide microbolometers. Russian Physics Journal, 50 (12). 1226-1231 doi:10.1007/s11182-008-9014-5
In(2007, December) Russian Physics Journal Vol. 50 (12) Springer Science and Business Media LLC

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Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Yu. (2019) Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy. Russian Physics Journal, 62 (5). 818-826 doi:10.1007/s11182-019-01783-z
Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Yu. (2019) Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films. Russian Physics Journal, 62 (6). 1054-1061 doi:10.1007/s11182-019-01813-w
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Voitsekhovskii, A. V., Nesmelov, S. N., Kokhanenko, A. P., Mashukov, Yu. P., Zakhar’yash, T. I., Vasil’ev, V. V., Varavin, V. S., Sidorov, Yu. G., Dvoretskii, S. A., Mikhailov, N. N. (2005) Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe. Russian Physics Journal, 48 (2). 143-147 doi:10.1007/s11182-005-0097-y
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