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Gaman, V. I. (2012) Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors. Russian Physics Journal, 54 (12). 1364-1371 doi:10.1007/s11182-012-9755-z

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Reference TypeJournal (article/letter/editorial)
TitlePhysical principles of operation of oxidizing gas sensors based on metal oxide semiconductors
JournalRussian Physics Journal
AuthorsGaman, V. I.Author
Year2012 (May)Volume54
Issue12
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-012-9755-zSearch in ResearchGate
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Mindat Ref. ID9035501Long-form Identifiermindat:1:5:9035501:1
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Full ReferenceGaman, V. I. (2012) Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors. Russian Physics Journal, 54 (12). 1364-1371 doi:10.1007/s11182-012-9755-z
Plain TextGaman, V. I. (2012) Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors. Russian Physics Journal, 54 (12). 1364-1371 doi:10.1007/s11182-012-9755-z
In(2012, May) Russian Physics Journal Vol. 54 (12) Springer Science and Business Media LLC

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