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Oleshko, V. I., Gorina, S. G., Korepanov, V. I., Lisitsyn, V. M., Prudaev, I. A., Tolbanov, O. P. (2013) Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam. Russian Physics Journal, 56 (1). 62-66 doi:10.1007/s11182-013-9995-6

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Reference TypeJournal (article/letter/editorial)
TitleLuminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam
JournalRussian Physics Journal
AuthorsOleshko, V. I.Author
Gorina, S. G.Author
Korepanov, V. I.Author
Lisitsyn, V. M.Author
Prudaev, I. A.Author
Tolbanov, O. P.Author
Year2013 (June)Volume56
Issue1
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11182-013-9995-6Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9035890Long-form Identifiermindat:1:5:9035890:2
GUID0
Full ReferenceOleshko, V. I., Gorina, S. G., Korepanov, V. I., Lisitsyn, V. M., Prudaev, I. A., Tolbanov, O. P. (2013) Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam. Russian Physics Journal, 56 (1). 62-66 doi:10.1007/s11182-013-9995-6
Plain TextOleshko, V. I., Gorina, S. G., Korepanov, V. I., Lisitsyn, V. M., Prudaev, I. A., Tolbanov, O. P. (2013) Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam. Russian Physics Journal, 56 (1). 62-66 doi:10.1007/s11182-013-9995-6
In(2013, June) Russian Physics Journal Vol. 56 (1) Springer Science and Business Media LLC

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Korepanov, V. I., Lisitsyn, V. M., Oleshko, V. I. (2000) High-current nanosecond electron beams for probing the parameters of solids. Russian Physics Journal, 43 (3). 185-192 doi:10.1007/bf02509607
Korepanov, V. I., Lisitsyn, V. M., Oleshko, V. I., Tsypilev, V. P. (2003) PETN detonation initiated by a high-power electron beam. Technical Physics Letters, 29. 669-671 doi:10.1134/1.1606784
Prudaev, I. A., Ivonin, I. V., Tolbanov, O. P. (2012) Current limitation in A 3 B 5 nitride light-emitting diodes under forward bias. Russian Physics Journal, 54 (12). 1372-1374 doi:10.1007/s11182-012-9756-y
Kalygina, V. M., Petrova, Yu. S., Prudaev, I. A., Tolbanov, O. P. (2016) Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide. Russian Physics Journal, 59 (6). 757-761 doi:10.1007/s11182-016-0833-5
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Khludkov, S. S., Prudaev, I. A., Root, L. O., Tolbanov, O. P., Ivonin, I. V. (2021) Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics. Russian Physics Journal, 63 (11) 2013-2024 doi:10.1007/s11182-021-02264-y
Avdochenko, B. I., Prudaev, I. A., Tolbanov, O. P., Chumerin, P. Yu., Yurchenko, V. I. (2016) A Solid-State Sub-Nanosecond Microwave Switch. Russian Physics Journal, 59 (8). 1187-1191 doi:10.1007/s11182-016-0889-2
Lomaev, M. I., Tarasenko, V. F., Dyatlov, A. V. (2019) Cumulation of a High-Current Electron Beam During a Nanosecond High-Voltage Discharge in a Low-Pressure Diode. Russian Physics Journal, 62 (6). 996-1000 doi:10.1007/s11182-019-01806-9
Lygdenova, T. Z., Kalygina, V. M., Novikov, V. A., Prudaev, I. A., Tolbanov, O. P., Tyazhev, A. V. (2018) Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering. Russian Physics Journal, 60 (11). 1911-1916 doi:10.1007/s11182-018-1302-0
Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P., Ivonin, I. V. (2022) Formation of Dislocations in the Process of Impurity Diffusion in GaAs. Russian Physics Journal, 64 (12) 2350-2356 doi:10.1007/s11182-022-02596-3
Budnitskii, D. L., Novikov, V. A., Tolbanov, O. P., Prudaev, I. A. (2008) Charge-carrier lifetimes in high-resistance GaAs doped by chromium diffusion. Russian Physics Journal, 51 (5). 531-535 doi:10.1007/s11182-008-9071-9
 
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