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Bagaev, V. S., Krivobok, V. S., Martovitsky, V. P., Novikov, A. V. (2009) Distribution of germanium in Si1 βˆ’ x Ge x (x < 0.1) layers grown on the Si(001) substrate as a function of layer thickness. Journal of Experimental and Theoretical Physics, 109 (6). 997-1010 doi:10.1134/s1063776109120115

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Reference TypeJournal (article/letter/editorial)
TitleDistribution of germanium in Si1 βˆ’ x Ge x (x < 0.1) layers grown on the Si(001) substrate as a function of layer thickness
JournalJournal of Experimental and Theoretical Physics
AuthorsBagaev, V. S.Author
Krivobok, V. S.Author
Martovitsky, V. P.Author
Novikov, A. V.Author
Year2009 (December)Volume109
Issue6
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063776109120115Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9041427Long-form Identifiermindat:1:5:9041427:1
GUID0
Full ReferenceBagaev, V. S., Krivobok, V. S., Martovitsky, V. P., Novikov, A. V. (2009) Distribution of germanium in Si1 βˆ’ x Ge x (x < 0.1) layers grown on the Si(001) substrate as a function of layer thickness. Journal of Experimental and Theoretical Physics, 109 (6). 997-1010 doi:10.1134/s1063776109120115
Plain TextBagaev, V. S., Krivobok, V. S., Martovitsky, V. P., Novikov, A. V. (2009) Distribution of germanium in Si1 βˆ’ x Ge x (x < 0.1) layers grown on the Si(001) substrate as a function of layer thickness. Journal of Experimental and Theoretical Physics, 109 (6). 997-1010 doi:10.1134/s1063776109120115
In(2009, December) Journal of Experimental and Theoretical Physics Vol. 109 (6) Pleiades Publishing Ltd

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Martovitsky, V. P., Krivobok, V. S. (2011) Brittle-plastic relaxation of misfit stresses in the Si(001)/Si1 βˆ’ x Ge x system. Journal of Experimental and Theoretical Physics, 113 (2). 288-305 doi:10.1134/s1063776111080085
Bagaev, V. S., Krivobok, V. S., Nikolaev, S. N., Onishchenko, E. E., Pruchkina, A. A., Aminev, D. F., Skorikov, M. L., Lobanov, D. N., Novikov, A. V. (2013) Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional Si1 βˆ’ x Ge x /Si structures. Journal of Experimental and Theoretical Physics, 117 (5). 912-925 doi:10.1134/s1063776113130074
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2016) Experimental observation of motion of edge dislocations in Ge/Ge x Si1–x /Si(001) (x = 0.2–0.6) heterostructures. Journal of Experimental and Theoretical Physics, 123 (5). 832-837 doi:10.1134/s1063776116110042
Bagaev, V. S., Zaitsev, V. V., Krivobok, V. S., Lobanov, D. N., Nikolaev, S. N., Novikov, A. V., Onishchenko, E. E. (2008) Channels of radiative recombination and phase transitions in a system of nonequilibrium carriers in a Si0.93Ge0.07/Si thin quantum well. Journal of Experimental and Theoretical Physics, 107 (5). 846-853 doi:10.1134/s1063776108110150
Bagaev, V. S., Davletov, E. T., Krivobok, V. S., Nikolaev, S. N., Novikov, A. V., Onishchenko, E. E., Pruchkina, A. A., Skorikov, M. L. (2015) Multiparticle states and the factors that complicate an experimental observation of the quantum coherence in the exciton gas of SiGe/Si quantum wells. Journal of Experimental and Theoretical Physics, 121 (6). 1052-1066 doi:10.1134/s106377611512002x
Orlov, L. K., Ivin, S. V., Fomin, V. M. (2017) Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy. Technical Physics, 62 (3). 449-459 doi:10.1134/s1063784217030161
Matveev, S. A., Denisov, S. A., Chalkov, V. Yu., Shengurov, V. G., Nikolichev, D. E., Boryakov, A. V., Trushin, V. N., Pitirimova, E. A. (2013) Structure and surface morphology of Si1 β€” x Ge x layers grown on Si/sapphire by molecular beam epitaxy using a sublimation silicon source and gaseous germanium source. Inorganic Materials, 49 (8) 749-753 doi:10.1134/s0020168513070108
Adiyatullin, A. F., Belykh, V. V., Kozlovsky, V. I., Krivobok, V. S., Martovitsky, V. P., Nikolaev, S. N. (2012) Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells. Journal of Experimental and Theoretical Physics, 115 (5). 885-896 doi:10.1134/s1063776112090014
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2008) Formation of misfit edge dislocations in Ge x Si1 βˆ’ x films (x ∼ 0.4–0.5) grown on tilted Si(001) β†’ (111) substrates. Physics of the Solid State, 50. 1857-1861 doi:10.1134/s1063783408100120
Bolkhovityanov, Yu. B., Gutakovskii, A. K., Deryabin, A. S., Sokolov, L. V. (2014) Specific features of plastic relaxation of a metastable Ge x Si1 βˆ’ x layer buried between a silicon substrate and a relaxed germanium layer. Physics of the Solid State, 56. 247-253 doi:10.1134/s106378341402005x
Bagaev, V. S., Krivobok, V. S., Lobanov, D. N., Minnullin, A. N., Nikolaev, S. N., Shaleev, A. N., Shevtsov, S. V. (2014) Structural and optical properties of metastable SiGe/Si films with a low germanium concentration. Physics of the Solid State, 56. 1957-1966 doi:10.1134/s1063783414100023
 
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