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Kang, Soo-Young, Yoon, Yo-Seop, Park, No-Won, Lee, Won-Yong, Kim, Gil-Sung, Yoon, Young-Gui, Koh, Jung-Huk, Koo, Sang-Mo, Umar, Ahmad, Lee, Sang-Kwon (2018) Electrical Properties of Exfoliated Multilayer Germanium Selenide (GeSe) Nanoflake Field-Effect Transistors. Science of Advanced Materials, 10. 1596-1600 doi:10.1166/sam.2018.3375

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Reference TypeJournal (article/letter/editorial)
TitleElectrical Properties of Exfoliated Multilayer Germanium Selenide (GeSe) Nanoflake Field-Effect Transistors
JournalScience of Advanced Materials
AuthorsKang, Soo-YoungAuthor
Yoon, Yo-SeopAuthor
Park, No-WonAuthor
Lee, Won-YongAuthor
Kim, Gil-SungAuthor
Yoon, Young-GuiAuthor
Koh, Jung-HukAuthor
Koo, Sang-MoAuthor
Umar, AhmadAuthor
Lee, Sang-KwonAuthor
Year2018 (November 1)Volume10
PublisherAmerican Scientific Publishers
DOIdoi:10.1166/sam.2018.3375Search in ResearchGate
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Mindat Ref. ID9255488Long-form Identifiermindat:1:5:9255488:3
GUID0
Full ReferenceKang, Soo-Young, Yoon, Yo-Seop, Park, No-Won, Lee, Won-Yong, Kim, Gil-Sung, Yoon, Young-Gui, Koh, Jung-Huk, Koo, Sang-Mo, Umar, Ahmad, Lee, Sang-Kwon (2018) Electrical Properties of Exfoliated Multilayer Germanium Selenide (GeSe) Nanoflake Field-Effect Transistors. Science of Advanced Materials, 10. 1596-1600 doi:10.1166/sam.2018.3375
Plain TextKang, Soo-Young, Yoon, Yo-Seop, Park, No-Won, Lee, Won-Yong, Kim, Gil-Sung, Yoon, Young-Gui, Koh, Jung-Huk, Koo, Sang-Mo, Umar, Ahmad, Lee, Sang-Kwon (2018) Electrical Properties of Exfoliated Multilayer Germanium Selenide (GeSe) Nanoflake Field-Effect Transistors. Science of Advanced Materials, 10. 1596-1600 doi:10.1166/sam.2018.3375
In(n.d.) Science of Advanced Materials Vol. 10. American Scientific Publishers

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