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(2002, April) Computational Materials Science Vol. 23 (1) Elsevier BV

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Reference TypeJournal (issue)
JournalComputational Materials Science
Year2002 (April)Volume23
Issue1
PublisherElsevier BV
Mindat Ref. ID9503459Long-form Identifiermindat:1:5:9503459:3
GUID0
Full Reference(2002, April) Computational Materials Science Vol. 23 (1) Elsevier BV
Plain Text(2002, April) Computational Materials Science Vol. 23 (1) Elsevier BV
In(n.d.) Computational Materials Science Vol. 23. Elsevier BV

Contains

Xiao Guo, Z, Huang, Hanchen, Iwata, Shuichi, Pankratov, Oleg, Yip, Sidney (2002) Preface. Computational Materials Science, 23 (1). 1pp. doi:10.1016/s0927-0256(01)00203-8
Cale, T.S., Bloomfield, M.O., Richards, D.F., Jansen, K.E., Gobbert, M.K. (2002) Integrated multiscale process simulation. Computational Materials Science, 23 (1). 3-14 doi:10.1016/s0927-0256(01)00216-6
Haslam, A.J., Moldovan, D., Phillpot, S.R., Wolf, D., Gleiter, H. (2002) Combined atomistic and mesoscale simulation of grain growth in nanocrystalline thin films. Computational Materials Science, 23 (1). 15-32 doi:10.1016/s0927-0256(01)00218-x
Pettifor, D.G., Oleinik, I.I., Nguyen-Manh, D., Vitek, V. (2002) Bond-order potentials: bridging the electronic to atomistic modelling hierarchies. Computational Materials Science, 23 (1). 33-37 doi:10.1016/s0927-0256(01)00204-x
Zhang, R.Q, Lo, S.F, Wan, J, Yu, D.K, Lee, S.T (2002) Characteristics of boron and nitrogen species on aluminum surface. Computational Materials Science, 23 (1). 38-42 doi:10.1016/s0927-0256(01)00207-5
Cho, Kyeongjae (2002) First-principles modeling of high-k gate dielectric materials. Computational Materials Science, 23 (1). 43-47 doi:10.1016/s0927-0256(01)00209-9
Zhang, Q.-M., Wu, S.Y., Zhang, Zhenyu (2002) Energetics of Ge addimers on the Si() and Ge() surfaces: a comparative study. Computational Materials Science, 23 (1). 48-54 doi:10.1016/s0927-0256(01)00210-5
Song, Y, Guo, Z.X, Yang, R, Li, D (2002) First principles study of influence of alloying elements on TiAl: cleavage strength and deformability. Computational Materials Science, 23 (1). 55-61 doi:10.1016/s0927-0256(01)00212-9
Samsonidze, Ge.G, Samsonidze, G.G, Yakobson, B.I (2002) Energetics of Stone–Wales defects in deformations of monoatomic hexagonal layers. Computational Materials Science, 23 (1). 62-72 doi:10.1016/s0927-0256(01)00220-8
Wan, J, Zhang, R.Q, Cheung, H.F (2002) Energetics of Ti atom diffusion into diamond film. Computational Materials Science, 23 (1). 73-79 doi:10.1016/s0927-0256(01)00235-x
Lin, Shu-Ya (2002) Shallow defect states in hydrogenated amorphous silicon oxide. Computational Materials Science, 23 (1). 80-84 doi:10.1016/s0927-0256(01)00236-1
Bockstedte, M, Liu, S.J, Pankratov, Oleg, Woo, C.H, Huang, Hanchen (2002) Diffusion of clusters down aluminum islands. Computational Materials Science, 23 (1). 85-94 doi:10.1016/s0927-0256(01)00232-4
Shi, S.Q, Huang, Hanchen, Woo, C.H (2002) Interaction of a transonic dislocation with subsonic dislocation and point defect clusters. Computational Materials Science, 23 (1). 95-104 doi:10.1016/s0927-0256(01)00227-0
Kang, Jeong Won, Hwang, Ho Jung (2002) Molecular dynamics simulations of energetic aluminum cluster deposition. Computational Materials Science, 23 (1). 105-110 doi:10.1016/s0927-0256(01)00213-0
Chang, Jinpeng, Cai, Wei, Bulatov, Vasily V, Yip, Sidney (2002) Molecular dynamics simulations of motion of edge and screw dislocations in a metal. Computational Materials Science, 23 (1). 111-115 doi:10.1016/s0927-0256(01)00221-x
Subramanian, Sundararaman, Yip, Sidney (2002) Structural instability of uniaxially compressed α-quartz. Computational Materials Science, 23 (1). 116-123 doi:10.1016/s0927-0256(01)00222-1
Cai, Wei, Bulatov, Vasily V, Justo, João F, Argon, Ali S, Yip, Sidney (2002) Kinetic Monte Carlo approach to modeling dislocation mobility. Computational Materials Science, 23 (1). 124-130 doi:10.1016/s0927-0256(01)00223-3
Xu, Xuejun, Wen, Mao, Hu, Zhong, Fukuyama, Seiji, Yokogawa, Kiyoshi (2002) Atomistic process on hydrogen embrittlement of a single crystal of nickel by the embedded atom method. Computational Materials Science, 23 (1). 131-138 doi:10.1016/s0927-0256(01)00217-8
Ngan, A.H.W., Wen, M. (2002) Atomistic simulation of energetics of motion of screw dislocations in bcc Fe at finite temperatures. Computational Materials Science, 23 (1). 139-145 doi:10.1016/s0927-0256(01)00224-5
Ogata, Shigenobu, Kitagawa, Hiroshi, Hirosaki, Naoto, Hatanaka, Yoshinari, Umezu, Takashi (2002) Molecular dynamics simulation of shearing deformation process of silicon nitride single crystal. Computational Materials Science, 23 (1). 146-154 doi:10.1016/s0927-0256(01)00225-7
Liu, W.C., Shi, S.Q., Huang, Hanchen, Woo, C.H. (2002) Dislocation nucleation and propagation during thin film deposition under compression. Computational Materials Science, 23 (1). 155-165 doi:10.1016/s0927-0256(01)00231-2
Zhou, L.G, Shi, S.Q (2002) Molecular dynamic simulations on tensile mechanical properties of single-walled carbon nanotubes with and without hydrogen storage. Computational Materials Science, 23 (1). 166-174 doi:10.1016/s0927-0256(01)00233-6
Hu, Wangyu, Shu, Xiaolin, Zhang, Bangwei (2002) Point-defect properties in body-centered cubic transition metals with analytic EAM interatomic potentials. Computational Materials Science, 23 (1). 175-189 doi:10.1016/s0927-0256(01)00238-5
Huang, Hanchen, Gilmer, George H (2002) Texture competition during thin film deposition – effects of grain boundary migration. Computational Materials Science, 23 (1). 190-196 doi:10.1016/s0927-0256(01)00234-8
Wang, E.G., Liu, B.G., Wu, J., Li, M.Z., Zhong, J.X., Wendelken, John, Niu, Q., Zhang, Z. (2002) Novel formation and decay mechanisms of nanostructures on surface. Computational Materials Science, 23 (1). 197-203 doi:10.1016/s0927-0256(01)00214-2
Zhou, Lang, Wei, Xiuqin, Deng, Zhangmin (2002) A simulation study of the effect of varying nitrogen potential on behavior of precipitation in nitridation of alloys. Computational Materials Science, 23 (1). 204-208 doi:10.1016/s0927-0256(01)00228-2
Ding, R., Guo, Z.X. (2002) Microstructural modelling of dynamic recrystallisation using an extended cellular automaton approach. Computational Materials Science, 23 (1). 209-218 doi:10.1016/s0927-0256(01)00211-7
Madec, R, Devincre, B, Kubin, L.P (2002) On the nature of attractive dislocation crossed states. Computational Materials Science, 23 (1). 219-224 doi:10.1016/s0927-0256(01)00215-4
Huang, Jianming, Ghoniem, Nasr M. (2002) The dynamics of dislocation interaction with sessile self-interstitial atom (SIA) defect cluster atmospheres. Computational Materials Science, 23 (1). 225-234 doi:10.1016/s0927-0256(01)00205-1
Walgraef, Daniel (2002) Mesoscopic models for surface deformation. Computational Materials Science, 23 (1). 235-241 doi:10.1016/s0927-0256(01)00208-7
Maroudas, Dimitrios, Rauf Gungor, M. (2002) Continuum and atomistic modeling of electromechanically-induced failure of ductile metallic thin films. Computational Materials Science, 23 (1). 242-249 doi:10.1016/s0927-0256(01)00229-4
Maroudas, Dimitrios, Zepeda-Ruiz, Luis A., Pelzel, Rodney I., Nosho, Brett Z., Henry Weinberg, W. (2002) Strain relaxation and interfacial stability in III–V semiconductor strained-layer heteroepitaxy: atomistic and continuum modeling and comparisons with experiments. Computational Materials Science, 23 (1). 250-259 doi:10.1016/s0927-0256(01)00230-0
Du, D.X., Woo, C.H. (2002) Effect of grain-structure topology in modelling aggregate irradiation creep behaviour of two-phase alloys. Computational Materials Science, 23 (1). 260-269 doi:10.1016/s0927-0256(01)00219-1
Hu, S.Y., Chen, L.Q. (2002) Diffuse-interface modeling of composition evolution in the presence of structural defects. Computational Materials Science, 23 (1). 270-282 doi:10.1016/s0927-0256(01)00206-3
Ma, X.Q., Shi, S.Q., Woo, C.H., Chen, L.Q. (2002) Effect of applied load on nucleation and growth of γ-hydrides in zirconium. Computational Materials Science, 23 (1). 283-290 doi:10.1016/s0927-0256(01)00226-9
Feng, F., Geng, M., Northwood, D.O. (2002) Mathematical model for the plateau region of P–C-isotherms of hydrogen-absorbing alloys using hydrogen reaction kinetics. Computational Materials Science, 23 (1). 291-299 doi:10.1016/s0927-0256(01)00237-3
(2002) Author index to Volume 23. Computational Materials Science, 23 (1). 301-303 doi:10.1016/s0927-0256(02)00216-1

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