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Hollering, M., Sieber, N., Maier, F., Ristein, Jürgen, Ley, Lothar, Riley, J.D., Leckey, R.C.G., Leisenberger, F., Netzer, F. (2000) Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC. Materials Science Forum, 338. 387-390 doi:10.4028/www.scientific.net/msf.338-342.387

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Reference TypeJournal (article/letter/editorial)
TitleElectronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC
JournalMaterials Science Forum
AuthorsHollering, M.Author
Sieber, N.Author
Maier, F.Author
Ristein, JürgenAuthor
Ley, LotharAuthor
Riley, J.D.Author
Leckey, R.C.G.Author
Leisenberger, F.Author
Netzer, F.Author
Year2000 (May)Volume338
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.338-342.387Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9849803Long-form Identifiermindat:1:5:9849803:9
GUID0
Full ReferenceHollering, M., Sieber, N., Maier, F., Ristein, Jürgen, Ley, Lothar, Riley, J.D., Leckey, R.C.G., Leisenberger, F., Netzer, F. (2000) Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC. Materials Science Forum, 338. 387-390 doi:10.4028/www.scientific.net/msf.338-342.387
Plain TextHollering, M., Sieber, N., Maier, F., Ristein, Jürgen, Ley, Lothar, Riley, J.D., Leckey, R.C.G., Leisenberger, F., Netzer, F. (2000) Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC. Materials Science Forum, 338. 387-390 doi:10.4028/www.scientific.net/msf.338-342.387
In(2000) Materials Science Forum Vol. 338. Trans Tech Publications, Ltd.

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Sieber, N., Hollering, M., Ristein, Jürgen, Ley, Lothar (2000) Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001). Materials Science Forum, 338. 391-394 doi:10.4028/www.scientific.net/msf.338-342.391
Hollering, M., Maier, F., Sieber, N., Stammler, M., Ristein, J., Ley, L., Stampfl, A.P.J., Riley, J.D., Leckey, R.C.G., Leisenberger, F.P., Netzer, F.P. (1999) Electronic states of an ordered oxide on C-terminated 6H–SiC. Surface Science, 442 (3). 531-542 doi:10.1016/s0039-6028(99)00998-x
Hollering, M., Mattern, B., Maier, F., Ley, Lothar, Stampfl, A.P.J., Xue, J., Riley, J.D., Leckey, R.C.G. (1998) Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface. Materials Science Forum, 264. 331-334 doi:10.4028/www.scientific.net/msf.264-268.331
Sieber, N., Seyller, Thomas, Ley, Lothar, Polcik, M., James, D., Riley, J.D., Leckey, R.C.G. (2002) A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces. Materials Science Forum, 389. 713-716 doi:10.4028/www.scientific.net/msf.389-393.713
Seyller, Thomas, Sieber, N., Emtsev, Konstantin V., Graupner, R., Ley, Lothar, Tadich, A., James, D., Riley, J.D., Leckey, R.C.G., Polcik, M. (2004) The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC. Materials Science Forum, 457. 395-398 doi:10.4028/www.scientific.net/msf.457-460.395
Seyller, Thomas, Gao, Kun Yuan, Ley, Lothar, Pensl, Gerhard, Ciobanu, Florin, Tadich, A., Riley, J.D., Leckey, R.C.G. (2004) Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition. Materials Science Forum, 457. 1369-1372 doi:10.4028/www.scientific.net/msf.457-460.1369
Emtsev, Konstantin V., Seyller, Thomas, Ley, Lothar, Tadich, A., Broekman, L., Huwald, E., Riley, J.D., Leckey, R.C.G. (2005) Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100). Materials Science Forum, 483. 547-550 doi:10.4028/www.scientific.net/msf.483-485.547
Sieber, N., Seyller, Thomas, Mantel, B.F., Ristein, Jürgen, Ley, Lothar (2001) Preparation and Characterization of Hydrogen Terminated 6H-SiC. Materials Science Forum, 353. 223-226 doi:10.4028/www.scientific.net/msf.353-356.223
Sieber, N., Ristein, Jürgen, Ley, Lothar (1998) Mechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas Mixtures. Materials Science Forum, 264. 825-828 doi:10.4028/www.scientific.net/msf.264-268.825
Emtsev, Konstantin V., Seyller, Thomas, Speck, Florian, Ley, Lothar, Stojanov, P., Riley, J.D., Leckey, R.C.G. (2007) Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy. Materials Science Forum, 556. 525-528 doi:10.4028/www.scientific.net/msf.556-557.525
Rohmfeld, S., Hundhausen, Martin, Ley, Lothar, Schulze, Norbert, Pensl, Gerhard (2000) Isotope Effects on the Raman Spectrum of SiC. Materials Science Forum, 338. 579-582 doi:10.4028/www.scientific.net/msf.338-342.579
 
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