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Hirao, T., Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Shiomi, Hiromu (2002) 4H-SiC MOSFETs on (03-38) Face. Materials Science Forum, 389. 1065-1068 doi:10.4028/www.scientific.net/msf.389-393.1065

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Reference TypeJournal (article/letter/editorial)
Title4H-SiC MOSFETs on (03-38) Face
JournalMaterials Science Forum
AuthorsHirao, T.Author
Yano, HiroshiAuthor
Kimoto, TsunenobuAuthor
Matsunami, HiroyukiAuthor
Shiomi, HiromuAuthor
Year2002 (April)Volume389
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.389-393.1065Search in ResearchGate
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Mindat Ref. ID9851645Long-form Identifiermindat:1:5:9851645:0
GUID0
Full ReferenceHirao, T., Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Shiomi, Hiromu (2002) 4H-SiC MOSFETs on (03-38) Face. Materials Science Forum, 389. 1065-1068 doi:10.4028/www.scientific.net/msf.389-393.1065
Plain TextHirao, T., Yano, Hiroshi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Shiomi, Hiromu (2002) 4H-SiC MOSFETs on (03-38) Face. Materials Science Forum, 389. 1065-1068 doi:10.4028/www.scientific.net/msf.389-393.1065
In(2002) Materials Science Forum Vol. 389. Trans Tech Publications, Ltd.

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Nakayama, Koji, Miyanagi, Youichi, Shiomi, Hiromu, Nishino, Shigehiro, Kimoto, Tsunenobu, Matsunami, Hiroyuki (2002) The Development of 4H-SiC {03-38} Wafers. Materials Science Forum, 389. 123-126 doi:10.4028/www.scientific.net/msf.389-393.123
Wahab, Qamar-ul, Kosugi, Hajime, Yano, Hiroshi, Hallin, Christer, Kimoto, Tsunenobu, Matsunami, Hiroyuki (2002) 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching. Materials Science Forum, 389. 1215-1218 doi:10.4028/www.scientific.net/msf.389-393.1215
Yano, Hiroshi, Hirao, Toshio, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Asano, Katsunori, Sugawara, Yoshitaka (2000) Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face. Materials Science Forum, 338. 1105-1108 doi:10.4028/www.scientific.net/msf.338-342.1105
Fujihira, Keiko, Kimoto, Tsunenobu, Matsunami, Hiroyuki (2002) Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD. Materials Science Forum, 389. 175-178 doi:10.4028/www.scientific.net/msf.389-393.175
Negoro, Yuki, Miyamoto, Nao, Kimoto, Tsunenobu, Matsunami, Hiroyuki (2002) Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20). Materials Science Forum, 389. 783-786 doi:10.4028/www.scientific.net/msf.389-393.783
Chen, Yi, Kimoto, Tsunenobu, Takeuchi, Yuuichi, Matsunami, Hiroyuki (2002) Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates. Materials Science Forum, 389. 255-258 doi:10.4028/www.scientific.net/msf.389-393.255
Yano, Hiroshi, Hirao, Taichi, Kimoto, Tsunenobu, Matsunami, Hiroyuki, Shiomi, Hiromu (2002) Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(033Μ„8). Applied Physics Letters, 81 (25). 4772-4774 doi:10.1063/1.1529313
Nakamura, Shun-ichi, Kumagai, Hironori, Kimoto, Tsunenobu, Matsunami, Hiroyuki (2002) Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC. Materials Science Forum, 389. 651-654 doi:10.4028/www.scientific.net/msf.389-393.651
Kimoto, Tsunenobu, Danno, Katsunori, Fujihira, Keiko, Shiomi, Hiromu, Matsunami, Hiroyuki (2003) Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes. Materials Science Forum, 433. 197-200 doi:10.4028/www.scientific.net/msf.433-436.197
Kimoto, Tsunenobu, Nakazawa, S., Fujihira, Keiko, Hirao, T., Nakamura, Shun-ichi, Chen, Yi, Hashimoto, K., Matsunami, Hiroyuki (2002) Recent Achievements and Future Challenges in SiC Homoepitaxial Growth. Materials Science Forum, 389. 165-170 doi:10.4028/www.scientific.net/msf.389-393.165
Yano, Hiroshi, Inoue, N., Kimoto, Tsunenobu, Matsunami, Hiroyuki (1998) Deep States in SiO2/p-Type 4H-SiC Interface. Materials Science Forum, 264. 841-844 doi:10.4028/www.scientific.net/msf.264-268.841
 
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