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Matocha, Kevin, Chow, T. Paul, Gutmann, Ronald J. (2002) Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides. Materials Science Forum, 389. 1535pp. doi:10.4028/www.scientific.net/msf.389-393.1535

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Reference TypeJournal (article/letter/editorial)
TitleGallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
JournalMaterials Science Forum
AuthorsMatocha, KevinAuthor
Chow, T. PaulAuthor
Gutmann, Ronald J.Author
Year2002 (April)Volume389
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.389-393.1535Search in ResearchGate
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Mindat Ref. ID9851772Long-form Identifiermindat:1:5:9851772:3
GUID0
Full ReferenceMatocha, Kevin, Chow, T. Paul, Gutmann, Ronald J. (2002) Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides. Materials Science Forum, 389. 1535pp. doi:10.4028/www.scientific.net/msf.389-393.1535
Plain TextMatocha, Kevin, Chow, T. Paul, Gutmann, Ronald J. (2002) Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides. Materials Science Forum, 389. 1535pp. doi:10.4028/www.scientific.net/msf.389-393.1535
In(2002) Materials Science Forum Vol. 389. Trans Tech Publications, Ltd.

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Matocha, Kevin, Chow, T. Paul, Gutmann, Ronald J. (2002) Gallium Nitride Power Device Design Tradeoffs. Materials Science Forum, 389. 1531-1534 doi:10.4028/www.scientific.net/msf.389-393.1531
Matocha, Kevin, Chow, T. Paul, Gutmann, Ronald J. (2004) Self-Aligned N+ Polysilicon-Gate GaN MOSFETs. Materials Science Forum, 457. 1633pp. doi:10.4028/www.scientific.net/msf.457-460.1633
Chatty, K., Banerjee, S., Chow, T. Paul, Gutmann, Ronald J. (2002) Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs. Materials Science Forum, 389. 1089-1092 doi:10.4028/www.scientific.net/msf.389-393.1089
Chatty, K., Banerjee, S., Chow, T. Paul, Gutmann, Ronald J., Arnold, Emil, Alok, Dev (2002) Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs. Materials Science Forum, 389. 1041-1044 doi:10.4028/www.scientific.net/msf.389-393.1041
Wang, Rong Jun, Bhat, I., Chow, T. Paul (2002) Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the Precursor. Materials Science Forum, 389. 211-214 doi:10.4028/www.scientific.net/msf.389-393.211
Zhu, Lin, Chow, T. Paul (2002) Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect Transistor. Materials Science Forum, 389. 1231-1234 doi:10.4028/www.scientific.net/msf.389-393.1231
Tang, Yi, Chow, T. Paul, Agarwal, Anant K., Ryu, Sei Hyung, Palmour, John W. (2002) Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT. Materials Science Forum, 389. 1341-1344 doi:10.4028/www.scientific.net/msf.389-393.1341
Wang, Rong Jun, Bhat, I., Chow, T. Paul (2002) In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source. Materials Science Forum, 389. 303-306 doi:10.4028/www.scientific.net/msf.389-393.303
Tang, Yi, Fedison, Jeffery B., Chow, T. Paul (2002) Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC. Materials Science Forum, 389. 1329-1332 doi:10.4028/www.scientific.net/msf.389-393.1329
Matocha, Kevin, Chow, T. Paul, Lu, H., Bhat, I. (1998) Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant. Materials Science Forum, 264. 1411-1414 doi:10.4028/www.scientific.net/msf.264-268.1411
Yoshikawa, Masahito, Satoh, Mirei, Ohshima, Takeshi, Itoh, Hisayoshi (2002) Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures. Materials Science Forum, 389. 1009-1012 doi:10.4028/www.scientific.net/msf.389-393.1009
 
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