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Hu, Jun, Li, Larry X., Alexandrov, Petre, Wang, Xiao Hui, Zhao, Jian Hui (2008) 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application. Materials Science Forum, 600. 947-950 doi:10.4028/www.scientific.net/msf.600-603.947

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Reference TypeJournal (article/letter/editorial)
Title5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application
JournalMaterials Science Forum
AuthorsHu, JunAuthor
Li, Larry X.Author
Alexandrov, PetreAuthor
Wang, Xiao HuiAuthor
Zhao, Jian HuiAuthor
Year2008 (September)Volume600
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.600-603.947Search in ResearchGate
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Mindat Ref. ID9867829Long-form Identifiermindat:1:5:9867829:1
GUID0
Full ReferenceHu, Jun, Li, Larry X., Alexandrov, Petre, Wang, Xiao Hui, Zhao, Jian Hui (2008) 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application. Materials Science Forum, 600. 947-950 doi:10.4028/www.scientific.net/msf.600-603.947
Plain TextHu, Jun, Li, Larry X., Alexandrov, Petre, Wang, Xiao Hui, Zhao, Jian Hui (2008) 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application. Materials Science Forum, 600. 947-950 doi:10.4028/www.scientific.net/msf.600-603.947
In(2008) Materials Science Forum Vol. 600. Trans Tech Publications, Ltd.

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