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Hsiao, Ta Ching, Tsao, S., Nagalyuk, Sergey, Mokhov, Evgeniy (2019) Major Carrier Element Concentrations in SiC Powder and Bulk Crystal. Materials Science Forum, 963. 26-29 doi:10.4028/www.scientific.net/msf.963.26

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Reference TypeJournal (article/letter/editorial)
TitleMajor Carrier Element Concentrations in SiC Powder and Bulk Crystal
JournalMaterials Science Forum
AuthorsHsiao, Ta ChingAuthor
Tsao, S.Author
Nagalyuk, SergeyAuthor
Mokhov, EvgeniyAuthor
Year2019 (July)Volume963
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.963.26Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9892652Long-form Identifiermindat:1:5:9892652:3
GUID0
Full ReferenceHsiao, Ta Ching, Tsao, S., Nagalyuk, Sergey, Mokhov, Evgeniy (2019) Major Carrier Element Concentrations in SiC Powder and Bulk Crystal. Materials Science Forum, 963. 26-29 doi:10.4028/www.scientific.net/msf.963.26
Plain TextHsiao, Ta Ching, Tsao, S., Nagalyuk, Sergey, Mokhov, Evgeniy (2019) Major Carrier Element Concentrations in SiC Powder and Bulk Crystal. Materials Science Forum, 963. 26-29 doi:10.4028/www.scientific.net/msf.963.26
In(2019) Materials Science Forum Vol. 963. Trans Tech Publications, Ltd.

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Hsiao, Ta Ching, Tsao, Shen, Nagalyuk, Sergey, Mokhov, Evgeny (2015) Characterization of Second-Phase Inclusion in Silicon Carbide Powders. Materials Science Forum, 821. 100-103 doi:10.4028/www.scientific.net/msf.821-823.100
Mokhov, Evgeniy N., Kazarova, Olga P., Nagalyuk, Sergey S. (2017) Effect of Neutron Irradiation on SiC Etching in KOH Melt. Materials Science Forum, 897. 291-294 doi:10.4028/www.scientific.net/msf.897.291
Mokhov, Evgeniy N., Nagalyuk, Sergey S., Soltamov, Victor A. (2017) Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds. Materials Science Forum, 897. 7-10 doi:10.4028/www.scientific.net/msf.897.7
Argunova, Tatiana S., Gutkin, Mikhail Yu., Shcherbachev, Kirill D., Nagalyuk, Sergey S., Kazarova, Olga P., Mokhov, Evgeniy N., Je, Jung H. (2017) Thermal and Lattice Misfit Stress Relaxation in Growing AlN Crystal with Simultaneous Evaporation of SiC Substrate. Materials Science Forum, 897. 711-714 doi:10.4028/www.scientific.net/msf.897.711
Steiner, Johannes, Arzig, Matthias, Hsiao, Ta Ching, Wellmann, Peter J. (2019) Optimization of the SiC Powder Source Size Distribution for the Sublimation Growth of Long Crystals Boules. Materials Science Forum, 963. 42-45 doi:10.4028/www.scientific.net/msf.963.42
Hsiao, Ta Ching, Tsao, Sheng (2012) Synthesis and Purification of Silicon Carbide Powders for Crystal Growth. Materials Science Forum, 717. 37-40 doi:10.4028/www.scientific.net/msf.717-720.37
Mokhov, Evgeniy N., Nagalyuk, Sergey S., Soltamov, Victor A. (2015) Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method. Materials Science Forum, 821. 359-362 doi:10.4028/www.scientific.net/msf.821-823.359
Sankin, Vladimir Ilich, Petrov, A.G., Nagalyuk, Sergey, Shkrebiy, Pavel P., Kalinina, Evgenia V., Lebedev, Alexander A. (2019) Terahertz Emission from SiC Natural Superlattices in Strong Electrical Field. Materials Science Forum, 963. 367-370 doi:10.4028/www.scientific.net/msf.963.367
Makarov, Yu.N., Litvin, D., Vasiliev, A., Nagalyuk, S. (2016) Sublimation Growth of 4 and 6 Inch 4H-SiC Low Defect Bulk Crystals in Ta (TaC) Crucibles. Materials Science Forum, 858. 101-104 doi:10.4028/www.scientific.net/msf.858.101
Mokhov, Eugene N., Nagalyuk, Sergey S. (2013) Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method. Materials Science Forum, 740. 60-64 doi:10.4028/www.scientific.net/msf.740-742.60
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