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Young, N.D., Gill, A. (1989) Mobile ion instabilities in polycrystalline silicon thin film transistors. Applied Surface Science, 39. 364-367 doi:10.1016/0169-4332(89)90451-0

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Reference TypeJournal (article/letter/editorial)
TitleMobile ion instabilities in polycrystalline silicon thin film transistors
JournalApplied Surface Science
AuthorsYoung, N.D.Author
Gill, A.Author
Year1989 (October)Volume39
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90451-0Search in ResearchGate
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Mindat Ref. ID9894815Long-form Identifiermindat:1:5:9894815:4
GUID0
Full ReferenceYoung, N.D., Gill, A. (1989) Mobile ion instabilities in polycrystalline silicon thin film transistors. Applied Surface Science, 39. 364-367 doi:10.1016/0169-4332(89)90451-0
Plain TextYoung, N.D., Gill, A. (1989) Mobile ion instabilities in polycrystalline silicon thin film transistors. Applied Surface Science, 39. 364-367 doi:10.1016/0169-4332(89)90451-0
In(n.d.) Applied Surface Science Vol. 39. Elsevier BV

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Eisele, I. (1989) Delta-type doping profiles in silicon. Applied Surface Science, 36. 39-51 doi:10.1016/0169-4332(89)90897-0
Meakin, D.B., Economou, N.A., Coxon, P.A., Stoemenos, J., Lowe, A., Migliorato, P. (1987) Low defect-density polycrystalline silicon for high performance thin film transistors. Applied Surface Science, 30. 372-382 doi:10.1016/0169-4332(87)90114-0
Panwar, O.S., Moore, R.A., Mitchell, N.S.J., Gamble, H.S., Armstrong, B.M. (1989) Low-temperature crystallisation of amorphous-silicon films for the fabrication of thin-film transistors. Applied Surface Science, 36. 247-256 doi:10.1016/0169-4332(89)90920-3
(1989) Editorial Board. Applied Surface Science, 39. doi:10.1016/0169-4332(89)90411-x
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Priolo, F., Spinella, C., La Ferla, A., Rimini, E., Ferla, G. (1989) Ion-assisted recrystallization of amorphous silicon. Applied Surface Science, 43. 178-186 doi:10.1016/0169-4332(89)90208-0
Koch, Frederick (1989) Conference organization. Applied Surface Science, 39. doi:10.1016/0169-4332(89)90414-5
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