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Paget, D., Drouhin, H.-J., Peretti, J. (1990) Infrared field assisted photoemission of metal-semiconductor structures. Applied Surface Science, 41. 38-43 doi:10.1016/0169-4332(89)90029-9

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Reference TypeJournal (article/letter/editorial)
TitleInfrared field assisted photoemission of metal-semiconductor structures
JournalApplied Surface Science
AuthorsPaget, D.Author
Drouhin, H.-J.Author
Peretti, J.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90029-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894899Long-form Identifiermindat:1:5:9894899:6
GUID0
Full ReferencePaget, D., Drouhin, H.-J., Peretti, J. (1990) Infrared field assisted photoemission of metal-semiconductor structures. Applied Surface Science, 41. 38-43 doi:10.1016/0169-4332(89)90029-9
Plain TextPaget, D., Drouhin, H.-J., Peretti, J. (1990) Infrared field assisted photoemission of metal-semiconductor structures. Applied Surface Science, 41. 38-43 doi:10.1016/0169-4332(89)90029-9
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Drouhin, H.-J., Paget, D., Peretti, J. (1989) Field-assisted infrared photoemission of metal-semiconductor structures. Surface Science Letters, 211. doi:10.1016/0167-2584(89)90367-8
Drouhin, H.-J., Paget, D., Peretti, J. (1989) Field-assisted infrared photoemission of metal-semiconductor structures. Surface Science, 211. 593-610 doi:10.1016/0039-6028(89)90819-4
Peretti, J., Drouhin, H.-J., Paget, D. (1990) Novel photoemission approach to hot-electron transport in semiconductors. Physical Review Letters, 64 (14). 1682-1685 doi:10.1103/physrevlett.64.1682
Peretti, J., Drouhin, H.-J., Paget, D. (1993) High-resolution energy analysis of field-assisted photoemission: A spectroscopic image of hot-electron transport in semiconductors. Physical Review B, 47 (7) 3603-3619 doi:10.1103/physrevb.47.3603
Niles, D.W., Tang, M., McKinley, J., Zanoni, R., Margaritondo, G. (1990) From heterojunction interfaces to metal-semiconductor interfaces. Applied Surface Science, 41. 139-143 doi:10.1016/0169-4332(89)90046-9
Van den Hoek, P.J., Baerends, E.J. (1990) Chemical bonding at metal-semiconductor interfaces. Applied Surface Science, 41. 236-240 doi:10.1016/0169-4332(89)90063-9
Morar, J.F., Karlsson, U.O., Uhrberg, R.I.G., Kanski, J., Nilsson, P.O., Qu, H. (1990) Angle-resolved photoemission study of the As/Ge(100) interface. Applied Surface Science, 41. 312-316 doi:10.1016/0169-4332(89)90077-9
Christen, J., Grundmann, M., Bimberg, D. (1990) Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of semiconductor heterointerfaces. Applied Surface Science, 41. 329-336 doi:10.1016/0169-4332(89)90080-9
Salvan, F., Thibaudau, F., Dumas, Ph. (1990) STM studies of metal-semiconductor interface formation. Applied Surface Science, 41. 88-96 doi:10.1016/0169-4332(89)90038-x
Matsuo, Kaori, Nakano, Katsuyuki (1990) Characterization of semiconductor oxides by IR diffuse reflectance spectroscopy. Applied Surface Science, 41. 53-56 doi:10.1016/0169-4332(89)90032-9
Peretti, J., Drouhin, H.-J., Paget, D., Mircéa, A. (1991) Band structure of indium phosphide from near-band-gap photoemission. Physical Review B, 44 (15) 7999-8008 doi:10.1103/physrevb.44.7999
 
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