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Hirose, K., Tsuda, H., Mizutani, T. (1990) Control of the Al/GaAs Schottky barrier height using a rare-earth metal interlayer. Applied Surface Science, 41. 174-178 doi:10.1016/0169-4332(89)90052-4

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Reference TypeJournal (article/letter/editorial)
TitleControl of the Al/GaAs Schottky barrier height using a rare-earth metal interlayer
JournalApplied Surface Science
AuthorsHirose, K.Author
Tsuda, H.Author
Mizutani, T.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90052-4Search in ResearchGate
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Mindat Ref. ID9894922Long-form Identifiermindat:1:5:9894922:3
GUID0
Full ReferenceHirose, K., Tsuda, H., Mizutani, T. (1990) Control of the Al/GaAs Schottky barrier height using a rare-earth metal interlayer. Applied Surface Science, 41. 174-178 doi:10.1016/0169-4332(89)90052-4
Plain TextHirose, K., Tsuda, H., Mizutani, T. (1990) Control of the Al/GaAs Schottky barrier height using a rare-earth metal interlayer. Applied Surface Science, 41. 174-178 doi:10.1016/0169-4332(89)90052-4
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

See Also

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Hirose, K., Tsuda, H., Mizutani, T. (1988) Al/n‐GaAs Schottky barrier height modified with rare‐earth metal interlayer. Journal of Applied Physics, 64 (11). 6575-6577 doi:10.1063/1.342032
Mönch, Winfried (1990) Mechanisms of barrier formation in schottky contacts: Metal-induced surface and interface states. Applied Surface Science, 41. 128-138 doi:10.1016/0169-4332(89)90045-7
Werner, J.H., Von KĂ€nel, H., Markewitz, G., Tung, R.T. (1990) Pressure dependences of silicide/silicon Schottky barrier heights. Applied Surface Science, 41. 159-163 doi:10.1016/0169-4332(89)90049-4
Spicer, W.E., Cao, R., Miyano, K., Kendelewicz, T., Lindau, I., Weber, E., Liliental-Weber, Z., Newman, N. (1990) From synchrotron radiation to I-V measurements of GaAs schottky barrier formation. Applied Surface Science, 41. 1-16 doi:10.1016/0169-4332(89)90026-3
Ludeke, R., Taleb-Ibrahimi, A., Jezequel, G. (1990) Delocalization of defects: A new model for the Schottky barrier. Applied Surface Science, 41. 151-158 doi:10.1016/0169-4332(89)90048-2
Suguro, K., Nakasaki, Y., Yoshii, T., Itoh, T. (1990) Barrier metal between tungsten and silicon for high temperature processing. Applied Surface Science, 41. 277-281 doi:10.1016/0169-4332(89)90070-6
Kampen, T.U., Park, S., Zahn, D.R.T. (2002) Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer. Applied Surface Science, 190. 461-466 doi:10.1016/s0169-4332(01)00919-9
(1990) Author index. Applied Surface Science, 41. 654-661 doi:10.1016/0169-4332(89)90138-4
Hirose, Kazuyuki, Foxman, Ethan (1989) Control of Al/GaAs Schottky barrier height by high Ce doping. Applied Physics Letters, 54 (23). 2347-2348 doi:10.1063/1.101122
(1990) Editorial Board. Applied Surface Science, 41. doi:10.1016/0169-4332(89)90023-8
(1990) Conference organization. Applied Surface Science, 41. doi:10.1016/0169-4332(89)90025-1
 
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