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Itoh, Masahiro, Kinoshita, Masako, Ajioka, Tuneo, Itoh, Masanori, Inada, Taroh (1990) Crystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100). Applied Surface Science, 41. 262-265 doi:10.1016/0169-4332(89)90067-6

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Reference TypeJournal (article/letter/editorial)
TitleCrystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100)
JournalApplied Surface Science
AuthorsItoh, MasahiroAuthor
Kinoshita, MasakoAuthor
Ajioka, TuneoAuthor
Itoh, MasanoriAuthor
Inada, TarohAuthor
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90067-6Search in ResearchGate
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Mindat Ref. ID9894937Long-form Identifiermindat:1:5:9894937:5
GUID0
Full ReferenceItoh, Masahiro, Kinoshita, Masako, Ajioka, Tuneo, Itoh, Masanori, Inada, Taroh (1990) Crystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100). Applied Surface Science, 41. 262-265 doi:10.1016/0169-4332(89)90067-6
Plain TextItoh, Masahiro, Kinoshita, Masako, Ajioka, Tuneo, Itoh, Masanori, Inada, Taroh (1990) Crystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100). Applied Surface Science, 41. 262-265 doi:10.1016/0169-4332(89)90067-6
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Itoh, Masahiro, Itoh, Hideki, Hirashita, Norio, Kinoshita, Masako, Ajioka, Tuneo (1992) Observation of microstructure at the polycrystalline silicon and tungsten silicide interface. Applied Surface Science, 56. 540-544 doi:10.1016/0169-4332(92)90285-6
Falta, J., Horn, M., Henzler, M. (1990) SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111). Applied Surface Science, 41. 230-235 doi:10.1016/0169-4332(89)90062-7
Suguro, K., Nakasaki, Y., Yoshii, T., Itoh, T. (1990) Barrier metal between tungsten and silicon for high temperature processing. Applied Surface Science, 41. 277-281 doi:10.1016/0169-4332(89)90070-6
Tung, R.T., Schrey, F. (1990) Epitaxial CoSi2/Si(111) interfaces. Applied Surface Science, 41. 223-229 doi:10.1016/0169-4332(89)90061-5
Itoh, Yoshiko, Murakami, Hideoki, Kinoshita, Akira (1996) Positron/positronium annihilation in low dimensional silicon materials. Applied Surface Science, 102. 423-426 doi:10.1016/0169-4332(96)00091-8
Kiyota, Yukihiro, Nakamura, Tohru, Inada, Taroh (1994) Boron δ-doping in Si using atmospheric pressure CVD. Applied Surface Science, 82. 400-404 doi:10.1016/0169-4332(94)90248-8
Inoue, Kohji, Okuyama, Masanori, Hamakawa, Yoshihiro (1990) Optical and interfacial properties of SiO2 films deposited on Si by photo-CVD. Applied Surface Science, 41. 407-410 doi:10.1016/0169-4332(89)90092-5
Kato, Y., Ito, T., Hiraki, A. (1990) Low temperature oxidation of crystalline porous silicon. Applied Surface Science, 41. 614-618 doi:10.1016/0169-4332(89)90131-1
Yamada, Isao (1990) Interfacial structure of ICB epitaxially deposited Al(110) bicrystal films on Si(100) substrates. Applied Surface Science, 41. 253-256 doi:10.1016/0169-4332(89)90065-2
(1990) Subject index. Applied Surface Science, 41. 662-680 doi:10.1016/0169-4332(89)90139-6
Fujimura, Norifumi, Tachibana, Shoji, Ito, Taichiro (1990) Characterization of Si-Rich WSix on Si. Applied Surface Science, 41. 286-289 doi:10.1016/0169-4332(89)90072-x
 
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