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Nadahara, Soichi, Shiozawa, Jun-ichi, Imai, Keitaro, Suguro, Kyoichi, Yamabe, Kikuo (1990) Protuberance growth at polysilicon surfaces during oxidation. Applied Surface Science, 41. 425-428 doi:10.1016/0169-4332(89)90096-2

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Reference TypeJournal (article/letter/editorial)
TitleProtuberance growth at polysilicon surfaces during oxidation
JournalApplied Surface Science
AuthorsNadahara, SoichiAuthor
Shiozawa, Jun-ichiAuthor
Imai, KeitaroAuthor
Suguro, KyoichiAuthor
Yamabe, KikuoAuthor
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90096-2Search in ResearchGate
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Mindat Ref. ID9894966Long-form Identifiermindat:1:5:9894966:7
GUID0
Full ReferenceNadahara, Soichi, Shiozawa, Jun-ichi, Imai, Keitaro, Suguro, Kyoichi, Yamabe, Kikuo (1990) Protuberance growth at polysilicon surfaces during oxidation. Applied Surface Science, 41. 425-428 doi:10.1016/0169-4332(89)90096-2
Plain TextNadahara, Soichi, Shiozawa, Jun-ichi, Imai, Keitaro, Suguro, Kyoichi, Yamabe, Kikuo (1990) Protuberance growth at polysilicon surfaces during oxidation. Applied Surface Science, 41. 425-428 doi:10.1016/0169-4332(89)90096-2
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Hattori, Takeo, Yamagishi, Hiroaki, Koike, Noboru, Imai, Keitaro, Yamabe, Kikuo (1990) Structural studies of ultrathin silicon oxides and their interfaces by XPS. Applied Surface Science, 41. 416-419 doi:10.1016/0169-4332(89)90094-9
Suguro, K., Nakasaki, Y., Yoshii, T., Itoh, T. (1990) Barrier metal between tungsten and silicon for high temperature processing. Applied Surface Science, 41. 277-281 doi:10.1016/0169-4332(89)90070-6
(1990) Editorial Board. Applied Surface Science, 41. doi:10.1016/0169-4332(89)90023-8
(1990) Conference organization. Applied Surface Science, 41. doi:10.1016/0169-4332(89)90025-1
Hiraki, Akio (1990) Preface. Applied Surface Science, 41. doi:10.1016/0169-4332(89)90024-x
(1990) Author index. Applied Surface Science, 41. 654-661 doi:10.1016/0169-4332(89)90138-4
(1990) Subject index. Applied Surface Science, 41. 662-680 doi:10.1016/0169-4332(89)90139-6
Maehashi, Kenzo, Hasegawa, Shigehiko, Nakashima, Hisao (1990) Atomic rearrangement during the initial stages of GaAs growth on Si(111)(√3Γ—βˆš3)-Ga surface. Applied Surface Science, 41. 567-571 doi:10.1016/0169-4332(89)90123-2
Borensztein, Y., Lopez-Rios, T., Vuye, G. (1990) Roughness induced at Si(111) surfaces by high temperature heating. Applied Surface Science, 41. 439-442 doi:10.1016/0169-4332(89)90099-8
M'Ghaieth, R., Gauthier, R., Pinard, P. (1989) Electron bombardment applied to EPR polysilicon ribbon crystal growth. Applied Surface Science, 36. 648-653 doi:10.1016/0169-4332(89)90961-6
Kato, Y., Ito, T., Hiraki, A. (1990) Low temperature oxidation of crystalline porous silicon. Applied Surface Science, 41. 614-618 doi:10.1016/0169-4332(89)90131-1
 
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