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Koma, Atsushi, Saiki, Koichiro, Sato, Yasuhiro (1990) Heteroepitaxy of a two-dimensional material on a three-dimensional material. Applied Surface Science, 41. 451-456 doi:10.1016/0169-4332(89)90102-5

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxy of a two-dimensional material on a three-dimensional material
JournalApplied Surface Science
AuthorsKoma, AtsushiAuthor
Saiki, KoichiroAuthor
Sato, YasuhiroAuthor
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90102-5Search in ResearchGate
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Mindat Ref. ID9894972Long-form Identifiermindat:1:5:9894972:8
GUID0
Full ReferenceKoma, Atsushi, Saiki, Koichiro, Sato, Yasuhiro (1990) Heteroepitaxy of a two-dimensional material on a three-dimensional material. Applied Surface Science, 41. 451-456 doi:10.1016/0169-4332(89)90102-5
Plain TextKoma, Atsushi, Saiki, Koichiro, Sato, Yasuhiro (1990) Heteroepitaxy of a two-dimensional material on a three-dimensional material. Applied Surface Science, 41. 451-456 doi:10.1016/0169-4332(89)90102-5
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Nishikawa, Hiroyuki, Saiki, Koichiro, Koma, Atsushi (1997) Surface morphology of S or Se terminated GaAs(111)B. Applied Surface Science, 113. 453-456 doi:10.1016/s0169-4332(96)00902-6
Nishida, Naoshi, Saiki, Koichiro, Koma, Atsushi (1995) Heteroepitaxy of CuCl on GaAs and Si substrates. Surface Science, 324 (2). 149-158 doi:10.1016/0039-6028(94)00708-x
Saiki, Koichiro, Sato, Yasuhiro, Koma, Atsushi (1989) Adsorption of Oxygen on Electron-Bombarded CaF2(111) Surfaces. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l134
Ueno, Keiji, Abe, Hideki, Saiki, Koichiro, Koma, Atsushi (1991) Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l1352
Ueno, Tetsuji, Yamamoto, Hideki, Saiki, Koichiro, Koma, Atsushi (1997) Van der Waals epitaxy of metal dihalide. Applied Surface Science, 113. 33-37 doi:10.1016/s0169-4332(96)00770-2
Saiki, Koichiro, Nakamura, Yuji, Nishida, Naoshi, Gao, Wei, Koma, Atsushi (1994) Heteroepitaxy of alkali halide on Si and GaAs substrates. Surface Science, 301 (1). 29-38 doi:10.1016/0039-6028(94)91285-8
Bomchil, G., Halimaoui, A., Herino, R. (1990) Porous silicon: The material and its applications in silicon-on-insulator technologies. Applied Surface Science, 41. 604-613 doi:10.1016/0169-4332(89)90130-x
Lee, H.C., Ishiwara, H., Furukawa, S., Saiki, K., Koma, A. (1990) Distribution of interfacial As atoms in the electron-beam exposure and epitaxy (EBE-epitaxy) technique for growing GaAs films on CaF2/Si(111) structures. Applied Surface Science, 41. 553-558 doi:10.1016/0169-4332(89)90121-9
Saiki, Koichiro, Sato, Yasuhiro, Ando, Koji, Koma, Atsushi (1987) In-situ observation of defect formation in CaF2(111) surfaces induced by low energy electron bombardment. Surface Science Letters, 192 (1). doi:10.1016/0167-2584(87)90830-9
Koma, Atsushi, Ueno, Keiji, Saiki, Koichiro (1991) Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials. Journal of Crystal Growth, 111 (1). 1029-1032 doi:10.1016/0022-0248(91)91126-u
Tatsuyama, C., Tanbo, T., Nakayama, N. (1990) Heteroepitaxy between layered semiconductors GaSe and InSe. Applied Surface Science, 41. 539-543 doi:10.1016/0169-4332(89)90118-9
 
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