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Yano, M., Ashida, M., Iwai, Y., Inoue, M. (1990) Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy. Applied Surface Science, 41. 457-463 doi:10.1016/0169-4332(89)90103-7

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Reference TypeJournal (article/letter/editorial)
TitleCharacteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy
JournalApplied Surface Science
AuthorsYano, M.Author
Ashida, M.Author
Iwai, Y.Author
Inoue, M.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90103-7Search in ResearchGate
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Mindat Ref. ID9894973Long-form Identifiermindat:1:5:9894973:7
GUID0
Full ReferenceYano, M., Ashida, M., Iwai, Y., Inoue, M. (1990) Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy. Applied Surface Science, 41. 457-463 doi:10.1016/0169-4332(89)90103-7
Plain TextYano, M., Ashida, M., Iwai, Y., Inoue, M. (1990) Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy. Applied Surface Science, 41. 457-463 doi:10.1016/0169-4332(89)90103-7
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Yano, M., Kawaguchi, A., Ashida, M., Iwai, Y., Inoue, M. (1989) Interface and thickness control of polytype heterostructures grown by molecular beam epitaxy. Applied Surface Science, 40. 115-119 doi:10.1016/0169-4332(89)90165-7
Sasaki, A., Suzuki, T., Kimata, M., Yano, M., Kawamura, K. (1994) Heterointerfaces of CdTe/α-Sn /InSb structure grown by molecular beam epitaxy. Applied Surface Science, 75. 298-302 doi:10.1016/0169-4332(94)90175-9
Evans, K.R., Stutz, C.E., Taylor, E.N., Ehret, J.E. (1992) Incorporation rate variation at heterointerfaces during III–V molecular beam epitaxy. Applied Surface Science, 56. 677-683 doi:10.1016/0169-4332(92)90321-n
Kanamoto, K., Fujiwara, K., Tokuda, Y., Tsukada, N., Ishii, M., Nakayama, T. (1990) Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy. Applied Surface Science, 41. 526-529 doi:10.1016/0169-4332(89)90115-3
Ogata, K., Komuro, T., Hama, K., Koike, K., Sasa, S., Inoue, M., Yano, M. (2004) Control of chemical bonding of the ZnO surface grown by molecular beam epitaxy. Applied Surface Science, 237. 348-351 doi:10.1016/j.apsusc.2004.06.095
Christen, J., Grundmann, M., Bimberg, D. (1990) Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of semiconductor heterointerfaces. Applied Surface Science, 41. 329-336 doi:10.1016/0169-4332(89)90080-9
Yamada Maruo, Y., Oshima, M., Waho, T., Kawamura, T., Maeyama, S., Miyahara, T. (1990) Photoemission studies of bonding properties at the MBE-grown CaF2/GaAs interface. Applied Surface Science, 41. 647-653 doi:10.1016/0169-4332(89)90137-2
Wada, T., Takeda, M., Yamada, T., Ichimura, M. (1990) Formation of A GexSi1-x alloy layer by high-energy electron-beam irradiation. Applied Surface Science, 41. 580-583 doi:10.1016/0169-4332(89)90125-6
Goto, S., Kakibayashi, H., Kawata, M., Usagawa, T. (1990) Evaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces. Applied Surface Science, 41. 480-486 doi:10.1016/0169-4332(89)90106-2
Iwai, Yoshio, Yano, Mitsuaki, Hagiwara, Ryuzou, Inoue, Masataka (1992) Raman scattering from InAs/AlSb ultrathin-layer superlattices grown by molecular beam epitaxy. Surface Science, 267 (1). 434-437 doi:10.1016/0039-6028(92)91170-g
Kumomi, H., Yonehara, T., Nishigaki, Y., Sato, N. (1990) Selective nucleation based epitaxy (sentaxy). Applied Surface Science, 41. 638-642 doi:10.1016/0169-4332(89)90135-9
 
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