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Serrari, A., Chartier, J.L., Le Bihan, R., Rigo, S., Dupuy, J.C. (1991) Study of atomic transport mechanism of oxygen during thermal nitridation of silicon dioxide. Applied Surface Science, 51. 133-138 doi:10.1016/0169-4332(91)90395-z

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Reference TypeJournal (article/letter/editorial)
TitleStudy of atomic transport mechanism of oxygen during thermal nitridation of silicon dioxide
JournalApplied Surface Science
AuthorsSerrari, A.Author
Chartier, J.L.Author
Le Bihan, R.Author
Rigo, S.Author
Dupuy, J.C.Author
Year1991 (September)Volume51
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(91)90395-zSearch in ResearchGate
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Mindat Ref. ID9895529Long-form Identifiermindat:1:5:9895529:7
GUID0
Full ReferenceSerrari, A., Chartier, J.L., Le Bihan, R., Rigo, S., Dupuy, J.C. (1991) Study of atomic transport mechanism of oxygen during thermal nitridation of silicon dioxide. Applied Surface Science, 51. 133-138 doi:10.1016/0169-4332(91)90395-z
Plain TextSerrari, A., Chartier, J.L., Le Bihan, R., Rigo, S., Dupuy, J.C. (1991) Study of atomic transport mechanism of oxygen during thermal nitridation of silicon dioxide. Applied Surface Science, 51. 133-138 doi:10.1016/0169-4332(91)90395-z
In(n.d.) Applied Surface Science Vol. 51. Elsevier BV

See Also

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Chartier, J.L., Plantard, M., Serrari, A., Le Bihan, R., Rigo, S., Ledys, J.L. (1989) Thermal nitridation of silicon dioxide at atmospheric pressure. Applied Surface Science, 40. 65-76 doi:10.1016/0169-4332(89)90160-8
Chartier, J.L., Serrari, A., Le Bihan, R., Ligeon, M., Gaspard, F., Muller, F. (1990) Thermal nitridation of anodic silicon dioxide. Applied Surface Science, 45. 351-354 doi:10.1016/0169-4332(90)90044-z
Maillot, C., Roulet, H., Dufour, G., Rochet, F., Rigo, S. (1986) Study of atomic transport mechanisms during thermal nitridation of silicon in ammonia using 15N and D labelled gas. Applied Surface Science, 26. 326-334 doi:10.1016/0169-4332(86)90073-5
Bréelle, E., Rigo, S., Kilner, J.A., Ganem, J.-J. (1994) SIMS study of rapid thermal nitridation of silicon dioxide thick films in ammonia ambient. Applied Surface Science, 81. 127-135 doi:10.1016/0169-4332(94)00173-1
Shen, J.Y., Adnot, A., Kaliaguine, S. (1991) An ESCA study of the interaction of oxygen with the surface of ruthenium. Applied Surface Science, 51. 47-60 doi:10.1016/0169-4332(91)90061-n
(1991) Editorial Board. Applied Surface Science, 51. doi:10.1016/0169-4332(91)90055-o
(1991) Announcement. Applied Surface Science, 51. 113pp. doi:10.1016/0169-4332(91)90067-t
Kar, S., Raychaudhuri, A., Sinha, A.K., Ashok, S. (1991) Ion beam modification of the dielectric properties of thin silicon dioxide films. Applied Surface Science, 48. 264-268 doi:10.1016/0169-4332(91)90342-h
Trimaille, I., Rigo, S. (1989) Use of 18O isotopic labelling to study thermal dry oxidation of silicon as a function of temperature and pressure. Applied Surface Science, 39. 65-80 doi:10.1016/0169-4332(89)90420-0
(1991) Author index. Applied Surface Science, 51. 212-213 doi:10.1016/0169-4332(91)90404-8
(1991) Subject index. Applied Surface Science, 51. 214-218 doi:10.1016/0169-4332(91)90405-9
 
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