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Regolini, J.L., Mastromatteo, E., Gauneau, M., Mercier, J., Dutartre, D., Bomchil, G., Bernard, C., Madar, R., Bensahel, D. (1991) Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology. Applied Surface Science, 53. 18-23 doi:10.1016/0169-4332(91)90236-d

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Reference TypeJournal (article/letter/editorial)
TitleAspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology
JournalApplied Surface Science
AuthorsRegolini, J.L.Author
Mastromatteo, E.Author
Gauneau, M.Author
Mercier, J.Author
Dutartre, D.Author
Bomchil, G.Author
Bernard, C.Author
Madar, R.Author
Bensahel, D.Author
Year1991 (November)Volume53
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(91)90236-dSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID9895593Long-form Identifiermindat:1:5:9895593:2
GUID0
Full ReferenceRegolini, J.L., Mastromatteo, E., Gauneau, M., Mercier, J., Dutartre, D., Bomchil, G., Bernard, C., Madar, R., Bensahel, D. (1991) Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology. Applied Surface Science, 53. 18-23 doi:10.1016/0169-4332(91)90236-d
Plain TextRegolini, J.L., Mastromatteo, E., Gauneau, M., Mercier, J., Dutartre, D., Bomchil, G., Bernard, C., Madar, R., Bensahel, D. (1991) Aspects of the selective deposition of TiSi2 by LRP-CVD for use in ULSI submicron technology. Applied Surface Science, 53. 18-23 doi:10.1016/0169-4332(91)90236-d
In(n.d.) Applied Surface Science Vol. 53. Elsevier BV

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Regolini, J.L., Bensahel, D., Bomchil, G., Mercier, J. (1989) Selective layers of TiSi2 deposited without substrate consumption in a cold wall LPCVD reactor. Applied Surface Science, 38. 408-415 doi:10.1016/0169-4332(89)90561-8
Regolini, J.L., Bensahel, D., Scheid, E., Perio, A., Mercier, J. (1989) Characterization of epitaxial silicon layers made by reduced pressure/temperature CVD. Applied Surface Science, 36. 673-680 doi:10.1016/0169-4332(89)90964-1
Gouy-Pailler, P., Haond, M., Mathiot, D., Gauneau, M., Perio, A., Regolini, J.L. (1993) A comparative study of TiSi2 obtained by solid-state reaction and chemical vapor deposition. Applied Surface Science, 73. 25-30 doi:10.1016/0169-4332(93)90142-x
Regolini, J.L., Margail, J., Bodnar, S., Maury, D., Morin, C. (1996) Selective epitaxial Si based layers and TiSi2 deposition by integrated chemical vapor deposition. Applied Surface Science, 100. 566-574 doi:10.1016/0169-4332(96)00340-6
Madar, R., Bernard, C. (1991) Chemical vapour deposition of metal silicides in silicon microelectronics. Applied Surface Science, 53. 1-10 doi:10.1016/0169-4332(91)90234-b
Pons, M., Barbier, J.N., Bernard, C., Madar, R. (1993) A coupled approach to thermochemical and mass transport modeling: application to TiSi2 deposition by CVD. Applied Surface Science, 73. 71-81 doi:10.1016/0169-4332(93)90148-5
Mastromatteo, E., Million Brodaz, J.F., Madar, R., Blanquet, E., Vahlas, C., Bernard, C., Palleau, J., Torres, J. (1989) Chemical vapor deposition of refractory metal silicides. Applied Surface Science, 38. 407pp. doi:10.1016/0169-4332(89)90560-6
Pares, G., Regolini, J. L., Mercier, J., Dutartre, D., Bensahel, D. (1990) Kinetic aspects of epitaxial silicon growth using disilane in a rapid thermal processing system. Journal of Applied Physics, 68 (9). 4885-4887 doi:10.1063/1.346121
Trincat, F., Regolini, J. L., Mercier, J., Bensahel, D. (1991) Selective WSi2Schottky diodes made by rapid thermal chemical vapor deposition of WCl6. Applied Physics Letters, 59 (25). 3291-3293 doi:10.1063/1.105709
Bouteville, A., Attuyt, C., Remy, J.C. (1991) Selective RTLPCVD of TiSi2 without substrate consumption. Applied Surface Science, 53. 11-17 doi:10.1016/0169-4332(91)90235-c
Mercier, J., Regolini, J.L., Bensahel, D., Scheid, E. (1989) Kinetic aspects of selective epitaxial growth using a rapid thermal processing system. Journal of Crystal Growth, 94 (4). 885-894 doi:10.1016/0022-0248(89)90121-8
 
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