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Leusink, G.J., Oosterlaken, T.G.M., van der Jeugd, C.A., Janssen, G.C.A.M., Radelaar, S. (1991) The growth of ultra-thin amorphous WGex films on Si by the GeH4 reduction of WF6. Applied Surface Science, 53. 47-53 doi:10.1016/0169-4332(91)90241-b

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Reference TypeJournal (article/letter/editorial)
TitleThe growth of ultra-thin amorphous WGex films on Si by the GeH4 reduction of WF6
JournalApplied Surface Science
AuthorsLeusink, G.J.Author
Oosterlaken, T.G.M.Author
van der Jeugd, C.A.Author
Janssen, G.C.A.M.Author
Radelaar, S.Author
Year1991 (November)Volume53
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(91)90241-bSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID9895598Long-form Identifiermindat:1:5:9895598:7
GUID0
Full ReferenceLeusink, G.J., Oosterlaken, T.G.M., van der Jeugd, C.A., Janssen, G.C.A.M., Radelaar, S. (1991) The growth of ultra-thin amorphous WGex films on Si by the GeH4 reduction of WF6. Applied Surface Science, 53. 47-53 doi:10.1016/0169-4332(91)90241-b
Plain TextLeusink, G.J., Oosterlaken, T.G.M., van der Jeugd, C.A., Janssen, G.C.A.M., Radelaar, S. (1991) The growth of ultra-thin amorphous WGex films on Si by the GeH4 reduction of WF6. Applied Surface Science, 53. 47-53 doi:10.1016/0169-4332(91)90241-b
In(n.d.) Applied Surface Science Vol. 53. Elsevier BV

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Jongste, J.F., Oosterlaken, T.G.M., Leusink, G.J., van der Jeugd, C.A., Janssen, G.C.A.M., Radelaar, S. (1995) Influence of mixed reductants on the growth rate of WF6-based W-CVD. Applied Surface Science, 91. 162-168 doi:10.1016/0169-4332(95)00113-1
Oosterlaken, T.G.M., Leusink, G.J., Janssen, G.C.A.M., Radelaar, S. (1993) Step coverage of tungsten films deposited by germane reduction of WF6. Applied Surface Science, 73. 64-70 doi:10.1016/0169-4332(93)90147-4
Leusink, G.J., Lokker, J.P., van den Homberg, M.J.C., Jongste, J.F., Oosterlaken, T.G.M., Janssen, G.C.A.M., Radelaar, S. (1995) Stress in Al, AlSiCu, and AlVPd films on oxidized Si substrates. Applied Surface Science, 91. 215-219 doi:10.1016/0169-4332(95)00121-2
VAN DER JEUGD, C.A., LEUSINK, G. J., JANSSEN, G. C.A.M., RADELAAR, S. (1991) A STUDY ON THE THERMODYNAMICS AND KINETICS OF TUNGSTEN DEPOSITION BY WF6 AND GeH4. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912101
Jongste, J.F., Janssen, G.C.A.M., Radelaar, S. (1991) Formation of titanium disilicide during rapid thermal annealing, observed by in-situ stress measurements. Applied Surface Science, 53. 212-218 doi:10.1016/0169-4332(91)90265-l
Janssen, G.C.A.M., Jongste, J.F., Radelaar, S. (1993) Preface. Applied Surface Science, 73. doi:10.1016/0169-4332(93)90135-x
van der Jeugd, C. A., Leusink, G. J., Janssen, G. C. A. M., Radelaar, S. (1991) A thermodynamic and kinetic study of chemical vapor deposition of tungsten from WF6and GeH4. Journal of Applied Physics, 70 (4). 2353-2360 doi:10.1063/1.350353
van der Jeugd, C. A., Leusink, G. J., Janssen, G. C. A. M., Radelaar, S. (1990) Selective chemical vapor deposition of tungsten using WF6and GeH4. Applied Physics Letters, 57 (4). 354-356 doi:10.1063/1.103690
Groenen, P.A.C., Hölscher, J.G.A., Brongersma, H.H. (1991) The WF6-Si reaction studied in situ by time-resolved mass spectrometry. Applied Surface Science, 53. 30-34 doi:10.1016/0169-4332(91)90238-f
Jongste, J.F., Prins, F.E., Janssen, G.C.A.M., Radelaar, S. (1989) Modelling of the formation of TiSi2 in a nitrogen ambient. Applied Surface Science, 38. 57-61 doi:10.1016/0169-4332(89)90519-9
Jansson, Ulf (1993) Ultra-high vacuum CVD of W and WSi2 films by Si reduction of WF6. Applied Surface Science, 73. 51-57 doi:10.1016/0169-4332(93)90145-2
 
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