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Briggs, A., Thomas, O., Madar, R., Senateur, J.P. (1991) Low temperature specific heat of CoSi2. Applied Surface Science, 53. 240-242 doi:10.1016/0169-4332(91)90270-t

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Reference TypeJournal (article/letter/editorial)
TitleLow temperature specific heat of CoSi2
JournalApplied Surface Science
AuthorsBriggs, A.Author
Thomas, O.Author
Madar, R.Author
Senateur, J.P.Author
Year1991 (November)Volume53
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(91)90270-tSearch in ResearchGate
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Mindat Ref. ID9895627Long-form Identifiermindat:1:5:9895627:8
GUID0
Full ReferenceBriggs, A., Thomas, O., Madar, R., Senateur, J.P. (1991) Low temperature specific heat of CoSi2. Applied Surface Science, 53. 240-242 doi:10.1016/0169-4332(91)90270-t
Plain TextBriggs, A., Thomas, O., Madar, R., Senateur, J.P. (1991) Low temperature specific heat of CoSi2. Applied Surface Science, 53. 240-242 doi:10.1016/0169-4332(91)90270-t
In(n.d.) Applied Surface Science Vol. 53. Elsevier BV

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Briggs, A., Thomas, O., Madar, R., Senateur, J.P. (1989) The high residual resistivity of CoSi2: Evidence for a homogeneity range. Applied Surface Science, 38. 88-93 doi:10.1016/0169-4332(89)90523-0
Gottlieb, U., Laborde, O., Thomas, O., Rouault, A., Senateur, J.P., Madar, R. (1991) Some transport properties of single crystals of group Va transition metal disilicides. Applied Surface Science, 53. 247-253 doi:10.1016/0169-4332(91)90272-l
Houssay, E., Rouault, A., Thomas, O., Madar, R., Senateur, J.P. (1989) Metallurgical reinvestigation of rare earth silicides. Applied Surface Science, 38. 156-161 doi:10.1016/0169-4332(89)90531-x
Gottlieb, U., Lasjaunias, J.C., Laborde, O., Thomas, O., Madar, R. (1993) Low temperature specific heat measurements of VSi2, NbSi2 and TaSi2. Applied Surface Science, 73. 232-236 doi:10.1016/0169-4332(93)90171-7
Jebasinski, R., Mantl, S., Vescan, L., Dieker, Ch. (1991) Formation of buried CoSi2 layers with ion beam synthesis at low implantation energies. Applied Surface Science, 53. 264-272 doi:10.1016/0169-4332(91)90275-o
Madar, R., Bernard, C. (1991) Chemical vapour deposition of metal silicides in silicon microelectronics. Applied Surface Science, 53. 1-10 doi:10.1016/0169-4332(91)90234-b
Ridgway, M.C., Elliman, R.G., Williams, J.S. (1991) Epitaxial recrystallization of ion-implanted CoSi2. Applied Surface Science, 53. 260-263 doi:10.1016/0169-4332(91)90274-n
(1991) Sponsors. Applied Surface Science, 53. doi:10.1016/0169-4332(91)90233-a
(1991) Author index. Applied Surface Science, 53. 396-399 doi:10.1016/0169-4332(91)90292-r
Affronte, M., Laborde, O., Gottlieb, U., Thomas, O., Madar, R. (1995) Angular dependence of the magnetoresistance of TiSi2 single crystals. Applied Surface Science, 91. 98-102 doi:10.1016/0169-4332(95)00102-6
Eichhammer, W., Maex, K., Elst, K., Vandervorst, W. (1991) Boron outdiffusion from poly- and monocrystalline CoSi2. Applied Surface Science, 53. 171-179 doi:10.1016/0169-4332(91)90259-m
 
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