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Umlor, M.T., Asoka-Kumar, P., Keeble, D.J., Cooke, P.W., Lynn, K.G. (1995) Positron annihilation studies of defects in molecular beam epitaxy grown III–V layers. Applied Surface Science, 85. 295-300 doi:10.1016/0169-4332(94)00347-5

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Reference TypeJournal (article/letter/editorial)
TitlePositron annihilation studies of defects in molecular beam epitaxy grown III–V layers
JournalApplied Surface Science
AuthorsUmlor, M.T.Author
Asoka-Kumar, P.Author
Keeble, D.J.Author
Cooke, P.W.Author
Lynn, K.G.Author
Year1995 (January)Volume85
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(94)00347-5Search in ResearchGate
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Mindat Ref. ID9897536Long-form Identifiermindat:1:5:9897536:1
GUID0
Full ReferenceUmlor, M.T., Asoka-Kumar, P., Keeble, D.J., Cooke, P.W., Lynn, K.G. (1995) Positron annihilation studies of defects in molecular beam epitaxy grown III–V layers. Applied Surface Science, 85. 295-300 doi:10.1016/0169-4332(94)00347-5
Plain TextUmlor, M.T., Asoka-Kumar, P., Keeble, D.J., Cooke, P.W., Lynn, K.G. (1995) Positron annihilation studies of defects in molecular beam epitaxy grown III–V layers. Applied Surface Science, 85. 295-300 doi:10.1016/0169-4332(94)00347-5
In(n.d.) Applied Surface Science Vol. 85. Elsevier BV

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Ikari, Atsushi (1995) Defects in Czochralski-grown silicon crystals investigated by positron annihilation. Applied Surface Science, 85. 253-258 doi:10.1016/0169-4332(94)00339-4
Keeble, D. J., Umlor, M. T., Asoka‐Kumar, P., Lynn, K. G., Cooke, P. W. (1993) Annealing of low‐temperature GaAs studied using a variable energy positron beam. Applied Physics Letters, 63 (1). 87-89 doi:10.1063/1.109706
Hulett, Lester D., Wallace, S., Xu, Jun, Nielsen, B., Szeles, Cs., Lynn, K.G., Pfau, J., Schaub, Ann (1995) Assay of weathering effects on protective polymer coatings using positron annihilation spectroscopy. Applied Surface Science, 85. 334-338 doi:10.1016/0169-4332(94)00355-6
Ghosh, V.J., Nielsen, B., Lynn, K.G., Welch, D.O. (1995) Defect profiling in elemental and multilayer systems: correlations of fitted defect concentrations with positron implantation profiles. Applied Surface Science, 85. 210-215 doi:10.1016/0169-4332(94)00333-5
Towner, A., Rice-Evans, P.C., Shaw, N. (1995) A positron annihilation study of the formation of defect layers in cadmium mercury telluride. Applied Surface Science, 85. 315-319 doi:10.1016/0169-4332(94)00351-3
Ghosh, V.J., Alatalo, M., Asoka-Kumar, P., Lynn, K.G., Kruseman, A.C. (1997) The momentum distribution of annihilating positron-electron pairs in aluminum. Applied Surface Science, 116. 278-282 doi:10.1016/s0169-4332(96)01069-0
Hozhabri, N., Koymen, A.R., Sharma, S.C., Alavi, K. (1995) Defects and arsenic distribution in low-temperature-grown GaAs. Applied Surface Science, 85. 311-314 doi:10.1016/0169-4332(94)00350-5
Asoka-Kumar, P., Lynn, K. G. (1995) Applications of Positron Annihilation Spectroscopy. Le Journal de Physique IV, 5. doi:10.1051/jp4:1995102
Goldberg, R.D., Schultz, P.J., Simpson, P.J. (1995) Determination of the characteristic signal for positron annihilation at divacancies in ion-irradiated silicon. Applied Surface Science, 85. 287-291 doi:10.1016/0169-4332(94)00345-9
Gerola, D., Waeber, W.B., Shi, M. (1995) Design and simulation of the PSI electrostatic positron beam. Applied Surface Science, 85. 106-110 doi:10.1016/0169-4332(94)00317-3
Hartley, J.H, Howell, R.H, Asoka-Kumar, P, Sterne, P.A, Akers, D, Denison, A (1999) Positron annihilation studies of fatigue in 304 stainless steel. Applied Surface Science, 149. 204-206 doi:10.1016/s0169-4332(99)00201-9
 
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