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Motta, N., Sgarlata, A., De Crescenzi, M., Derrien, J. (1996) STM studies of GeSi thin layers epitaxially grown on Si(111). Applied Surface Science, 102. 57-61 doi:10.1016/0169-4332(96)00019-0

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Reference TypeJournal (article/letter/editorial)
TitleSTM studies of GeSi thin layers epitaxially grown on Si(111)
JournalApplied Surface Science
AuthorsMotta, N.Author
Sgarlata, A.Author
De Crescenzi, M.Author
Derrien, J.Author
Year1996 (August)Volume102
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00019-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9898562Long-form Identifiermindat:1:5:9898562:3
GUID0
Full ReferenceMotta, N., Sgarlata, A., De Crescenzi, M., Derrien, J. (1996) STM studies of GeSi thin layers epitaxially grown on Si(111). Applied Surface Science, 102. 57-61 doi:10.1016/0169-4332(96)00019-0
Plain TextMotta, N., Sgarlata, A., De Crescenzi, M., Derrien, J. (1996) STM studies of GeSi thin layers epitaxially grown on Si(111). Applied Surface Science, 102. 57-61 doi:10.1016/0169-4332(96)00019-0
In(n.d.) Applied Surface Science Vol. 102. Elsevier BV

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Davoli, I., Gunnella, R., Castrucci, P., Pinto, N., Bernardini, R., De Crescenzi, M. (1996) XPD study of atomic intermixing at the Ge/Si(001) interface. Applied Surface Science, 102. 102-106 doi:10.1016/0169-4332(96)00030-x
Frangis, N., Van Tendeloo, G., Van Landuyt, J., Muret, P., Nguyen, T.T.A. (1996) Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate. Applied Surface Science, 102. 163-168 doi:10.1016/0169-4332(96)00040-2
Motta, N, Sgarlata, A, Calarco, R, Nguyen, Q, Castro Cal, J, Patella, F, Balzarotti, A, De Crescenzi, M (1998) Growth of Ge–Si(111) epitaxial layers: intermixing, strain relaxation and island formation. Surface Science, 406 (1). 254-263 doi:10.1016/s0039-6028(98)00121-6
Ali, I., Muret, P., Nguyen Tan, T.A. (1996) Properties of semiconducting rhenium silicide thin films grown epitaxially on silicon (111). Applied Surface Science, 102. 147-150 doi:10.1016/0169-4332(96)00035-9
Rochet, F., Dufour, G., Roulet, H., Motta, N., Sgarlata, A., Piancastelli, M.N., De Crescenzi, M. (1994) Copper phthalocyanine on Si(111)-7 × 7 and Si(001)-2 × 1: an XPS/AES and STM study. Surface Science, 319 (1). 10-20 doi:10.1016/0039-6028(94)90565-7
Bayliss, Sue, Zhang, Qi, Harris, Peter (1996) Network dimensionality of porous Si and Ge. Applied Surface Science, 102. 390-394 doi:10.1016/0169-4332(96)00084-0
De Crescenzi, M., Gaggiotti, G., Motta, N., Patella, F., Balzarotti, A., Mattogno, G., Derrien, J. (1991) Electronic structure of epitaxial β-FeSi2 on Si(111). Surface Science Letters, 251. doi:10.1016/0167-2584(91)90849-m
Lagomarsino, S., Derrien, J., Kelires, P. (1996) Preface. Applied Surface Science, 102. doi:10.1016/0169-4332(96)80028-6
De Crescenzi, M., Gaggiotti, G., Motta, N., Patella, F., Balzarotti, A., Mattogno, G., Derrien, J. (1991) Electronic structure of epitaxial β-FeSi2 on Si(111). Surface Science, 251. 175-179 doi:10.1016/0039-6028(91)90976-y
Piancastelli, M. N., Motta, N., Sgarlata, A., Balzarotti, A., De Crescenzi, M. (1993) Topographic and spectroscopic analysis of ethylene adsorption on Si(111)7×7 by STM and STS. Physical Review B, 48 (24) 17892-17896 doi:10.1103/physrevb.48.17892
Castrucci, P, Sgarlata, A, Scarselli, M, De Crescenzi, M (2003) STM study of acetylene reaction with Si(111): observation of a carbon-induced Si(111)√3×√3R30° reconstruction. Surface Science, 531 (1). doi:10.1016/s0039-6028(03)00490-4
 
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