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Kobayashi, Yoshihiro, Isaka, Hiroaki, Ogino, Toshio (1998) Composition of dimers on Ge/Si(001)2×1 surfaces analyzed by infrared (IR) reflection spectroscopy of surface hydrogen vibration. Applied Surface Science, 130. 314-320 doi:10.1016/s0169-4332(98)00077-4

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Reference TypeJournal (article/letter/editorial)
TitleComposition of dimers on Ge/Si(001)2×1 surfaces analyzed by infrared (IR) reflection spectroscopy of surface hydrogen vibration
JournalApplied Surface Science
AuthorsKobayashi, YoshihiroAuthor
Isaka, HiroakiAuthor
Ogino, ToshioAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00077-4Search in ResearchGate
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Mindat Ref. ID9900400Long-form Identifiermindat:1:5:9900400:4
GUID0
Full ReferenceKobayashi, Yoshihiro, Isaka, Hiroaki, Ogino, Toshio (1998) Composition of dimers on Ge/Si(001)2×1 surfaces analyzed by infrared (IR) reflection spectroscopy of surface hydrogen vibration. Applied Surface Science, 130. 314-320 doi:10.1016/s0169-4332(98)00077-4
Plain TextKobayashi, Yoshihiro, Isaka, Hiroaki, Ogino, Toshio (1998) Composition of dimers on Ge/Si(001)2×1 surfaces analyzed by infrared (IR) reflection spectroscopy of surface hydrogen vibration. Applied Surface Science, 130. 314-320 doi:10.1016/s0169-4332(98)00077-4
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Sumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1998) Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering. Applied Surface Science, 130. 133-138 doi:10.1016/s0169-4332(98)00039-7
Omi, Hiroo, Ogino, Toshio (1998) Self-organization of nanoscale Ge islands in Si/Ge/Si(113) multilayers. Applied Surface Science, 130. 781-785 doi:10.1016/s0169-4332(98)00154-8
Kobayashi, Yoshihiro, Sumitomo, Koji, Shiraishi, Kenji, Urisu, Tuneo, Ogino, Toshio (1999) Control of surface composition on Ge/Si(001) by atomic hydrogen irradiation. Surface Science, 436 (1). 9-14 doi:10.1016/s0039-6028(99)00689-5
Kobayashi, Yoshihiro, Ogino, Toshio (1996) Infrared external reflection spectroscopy of self-assembled monolayer films on Si substrate with a buried metal layer (BML) structure. Applied Surface Science, 100. 407-411 doi:10.1016/0169-4332(96)00309-1
Prabhakaran, Kuniyil, Kobayashi, Yoshihiro, Ogino, Toshio (1998) Improved thermal stability of ultrathin silicon oxynitride layer due to nitrogen incorporation at the interface. Applied Surface Science, 130. 182-186 doi:10.1016/s0169-4332(98)00047-6
Shioda, Ryu, van der Weide, Jaap (1998) Observation of hydrogen adsorption on Si(001) by reflectance difference spectroscopy. Applied Surface Science, 130. 266-270 doi:10.1016/s0169-4332(98)00068-3
Shimoshikiryo, Fumikazu, Takakuwa, Yuji, Miyamoto, Nobuo (1998) Observation of dimer dangling bonds on a Si(001)2×1 surface by grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy. Applied Surface Science, 130. 123-127 doi:10.1016/s0169-4332(98)00037-3
Fukuda, T, Ogino, T (1998) Initial oxidation stage of the Ge(100) 2×1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopy. Applied Surface Science, 130. 165-169 doi:10.1016/s0169-4332(98)00044-0
Kobayashi, Yoshihiro, Ogino, Toshio (1996) Angle-variable infrared external reflection spectroscopy in UHV and its application to the observation of SiH vibrations on Si(001) substrates with a buried metal layer. Surface Science, 368 (1). 102-107 doi:10.1016/s0039-6028(97)80024-6
Nara, Jun, Sasaki, Taizo, Ohno, Takahisa (1998) First-principles calculation on diffusion of Si adatoms on H/Si(001)-(2×1) surface. Applied Surface Science, 130. 254-259 doi:10.1016/s0169-4332(98)00065-8
Noda, Hideyuki, Urisu, Tsuneo, Kobayashi, Yoshihiro, Ogino, Toshio (2000) Initial Stage of Hydrogen Etching of Si Surfaces Investigated by Infrared Reflection Absorption Spectroscopy. Japanese Journal of Applied Physics, 39. 6985-6989 doi:10.1143/jjap.39.6985
 
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