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Muto, A., Okada, M., Ikeda, H., Zaima, S., Yasuda, Y. (1998) Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy. Applied Surface Science, 130. 321-326 doi:10.1016/s0169-4332(98)00078-6

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Reference TypeJournal (article/letter/editorial)
TitleEffects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy
JournalApplied Surface Science
AuthorsMuto, A.Author
Okada, M.Author
Ikeda, H.Author
Zaima, S.Author
Yasuda, Y.Author
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00078-6Search in ResearchGate
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Mindat Ref. ID9900401Long-form Identifiermindat:1:5:9900401:3
GUID0
Full ReferenceMuto, A., Okada, M., Ikeda, H., Zaima, S., Yasuda, Y. (1998) Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy. Applied Surface Science, 130. 321-326 doi:10.1016/s0169-4332(98)00078-6
Plain TextMuto, A., Okada, M., Ikeda, H., Zaima, S., Yasuda, Y. (1998) Effects of H-termination on Ge film growth on Si(111) surfaces by solid phase epitaxy. Applied Surface Science, 130. 321-326 doi:10.1016/s0169-4332(98)00078-6
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Okada, Masahisa, Muto, Akiyoshi, Suzumura, Isao, Ikeda, Hiroya, Zaima, Shigeaki, Yasuda, Yukio (1998) Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy. Japanese Journal of Applied Physics, 37. 6970-6973 doi:10.1143/jjap.37.6970
Nakagawa, Y., Higashi, M., Ikeda, H., Zaima, S., Yasuda, Y. (1998) Local bonding structures of SiO2 films on H-terminated Si(100) surfaces studied by using high-resolution electron energy loss spectroscopy. Applied Surface Science, 130. 192-196 doi:10.1016/s0169-4332(98)00049-x
Okada, M, Muto, A, Ikeda, H, Zaima, S, Yasuda, Y (1998) Nucleation and growth of Ge on Si(111) by MBE with additional atomic hydrogen irradiation studied by scanning tunneling microscopy. Journal of Crystal Growth, 188 (1). 119-124 doi:10.1016/s0022-0248(98)00041-4
Ikeda, H., Nakagawa, Y., Toshima, M., Furuta, S., Zaima, S., Yasuda, Y. (1997) Initial oxidation of H-terminated Si(111) surfaces studied by HREELS. Applied Surface Science, 117. 109-113 doi:10.1016/s0169-4332(97)80061-x
Yasuda, Yukio, Ikeda, Hiroya, Zaima, Shigeaki (1997) Effects of H-termination on initial oxidation process. Applied Surface Science, 113. 579-584 doi:10.1016/s0169-4332(96)00796-9
Ohshima, N., Zaima, S., Koide, Y., 'Tomioka, S., Yasuda, Y. (1992) Initial growth of Ge films on Si(111)7 Γ— 7 surfaces by gas source molecular beam epitaxy. Applied Surface Science, 60. 120-125 doi:10.1016/0169-4332(92)90404-l
Ikegami, H., Ikeda, H., Zaima, S., Yasuda, Y. (1997) Thermal stability of ultra-thin CoSi2 films on Si(100)-2 Γ— 1 surfaces. Applied Surface Science, 117. 275-279 doi:10.1016/s0169-4332(97)80093-1
Ikeda, H., Hotta, K., Furuta, S., Zaima, S., Yasuda, Y. (1996) Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces. Applied Surface Science, 104. 354-358 doi:10.1016/s0169-4332(96)00170-5
Wasekura, M, Higashi, M, Ikeda, H, Sakai, A, Zaima, S, Yasuda, Y (2000) A study on initial oxidation of Si(100)-2Γ—1 surfaces by coaxial impact collision ion scattering spectroscopy. Applied Surface Science, 159. 35-40 doi:10.1016/s0169-4332(00)00099-4
Okada, Masahisa, Shimizu, Takaya, Ikeda, Hiroya, Zaima, Shigeaki, Yasuda, Yukio (1997) The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM. Applied Surface Science, 113. 349-353 doi:10.1016/s0169-4332(96)00777-5
Omori, S, Ishii, H, Nihei, Y (1998) Photoelectron diffraction study on the epitaxial growth of SrF2 on Ge(111)-c(2Γ—8). Applied Surface Science, 130. 67-71 doi:10.1016/s0169-4332(98)00026-9
 
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