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Fukutome, Hidenobu, Takano, Keizo, Yasuda, Haruyuki, Maehashi, Kenzo, Hasegawa, Shigehiko, Nakashima, Hisao (1998) Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces. Applied Surface Science, 130. 346-351 doi:10.1016/s0169-4332(98)00082-8

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Reference TypeJournal (article/letter/editorial)
TitleScanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces
JournalApplied Surface Science
AuthorsFukutome, HidenobuAuthor
Takano, KeizoAuthor
Yasuda, HaruyukiAuthor
Maehashi, KenzoAuthor
Hasegawa, ShigehikoAuthor
Nakashima, HisaoAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00082-8Search in ResearchGate
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Mindat Ref. ID9900405Long-form Identifiermindat:1:5:9900405:9
GUID0
Full ReferenceFukutome, Hidenobu, Takano, Keizo, Yasuda, Haruyuki, Maehashi, Kenzo, Hasegawa, Shigehiko, Nakashima, Hisao (1998) Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces. Applied Surface Science, 130. 346-351 doi:10.1016/s0169-4332(98)00082-8
Plain TextFukutome, Hidenobu, Takano, Keizo, Yasuda, Haruyuki, Maehashi, Kenzo, Hasegawa, Shigehiko, Nakashima, Hisao (1998) Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces. Applied Surface Science, 130. 346-351 doi:10.1016/s0169-4332(98)00082-8
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Suekane, Osamu, Hasegawa, Shigehiko, Tanaka, Masakazu, Okui, Toshiko, Nakashima, Hisao (2002) Annealing effect on InAs islands on GaAs(001) substrates studied by scanning tunneling microscopy. Applied Surface Science, 190. 218-221 doi:10.1016/s0169-4332(01)00868-6
Maehashi, Kenzo, Hasegawa, Shigehiko, Nakashima, Hisao (1990) Atomic rearrangement during the initial stages of GaAs growth on Si(111)(√3×√3)-Ga surface. Applied Surface Science, 41. 567-571 doi:10.1016/0169-4332(89)90123-2
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Okui, Toshiko, Hasegawa, Shigehiko, Nakashima, Hisao, Fukutome, Hidenobu, Arimoto, Hiroshi (2002) Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy. Applied Physics Letters, 81 (13). 2475-2477 doi:10.1063/1.1509118
Hasegawa, Shigehiko, Arakawa, Katsuhito, Oooka, Hiroki, Nakashima, Hisao (2000) Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy. Applied Surface Science, 162. 430-434 doi:10.1016/s0169-4332(00)00228-2
Yasuda, Haruyuki, Abe, Daisuke, Hasegawa, Shigehiko, Maehashi, Kenzo, Nakashima, Hisao (1995) Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth onSi(111)(1×1)-Asand As-DesorbedSi(111)(1×1)Surfaces. Japanese Journal of Applied Physics, 34. 942-945 doi:10.1143/jjap.34.942
Yokoyama, Shin, Ikeda, Norihiko, Kajikawa, Kouji, Nakashima, Yoshimitsu (1998) Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces. Applied Surface Science, 130. 352-356 doi:10.1016/s0169-4332(98)00083-x
Yasuda, Haruyuki, Hasegawa, Shigehiko, Maruyama, Masakatsu, Abe, Daisuke, Nakashima, Hisao (1998) Low-energy-electron-diffraction study of the As-stabilized Si(111) “1×1”surface. Physical Review B, 57 (8) 4776-4781 doi:10.1103/physrevb.57.4776
Hasegawa, Shigehiko, Maruyama, Masakatsu, Hirata, Yoshitane, Abe, Daisuke, Nakashima, Hisao (1998) New model for Si(111)-(3×1)Li through determination of its surface Si atom density with the use of scanning tunneling microscopy. Surface Science, 405 (2). doi:10.1016/s0039-6028(98)00096-x
Usuda, K, Yamada, K (1999) Scanning tunneling microscopy observation of hydrogen-terminated Si(001) surfaces after rinsing in ultrapure water with low dissolved oxygen concentration. Applied Surface Science, 143. 16-22 doi:10.1016/s0169-4332(99)00098-7
 
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