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Shen, A., Ohno, H., Horikoshi, Y., Guo, S.P., Ohno, Y., Matsukura, F. (1998) Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study. Applied Surface Science, 130. 382-386 doi:10.1016/s0169-4332(98)00087-7

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Reference TypeJournal (article/letter/editorial)
TitleLow-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study
JournalApplied Surface Science
AuthorsShen, A.Author
Ohno, H.Author
Horikoshi, Y.Author
Guo, S.P.Author
Ohno, Y.Author
Matsukura, F.Author
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00087-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900410Long-form Identifiermindat:1:5:9900410:1
GUID0
Full ReferenceShen, A., Ohno, H., Horikoshi, Y., Guo, S.P., Ohno, Y., Matsukura, F. (1998) Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study. Applied Surface Science, 130. 382-386 doi:10.1016/s0169-4332(98)00087-7
Plain TextShen, A., Ohno, H., Horikoshi, Y., Guo, S.P., Ohno, Y., Matsukura, F. (1998) Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study. Applied Surface Science, 130. 382-386 doi:10.1016/s0169-4332(98)00087-7
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Guo, S.P, Ohno, H, Shen, A, Matsukura, F, Ohno, Y (1998) Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates. Applied Surface Science, 130. 797-802 doi:10.1016/s0169-4332(98)00157-3
Shen, A., Horikoshi, Y., Ohno, H., Guo, S. P. (1997) Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure. Applied Physics Letters, 71 (11). 1540-1542 doi:10.1063/1.119973
Matsukura, F, Abe, E, Ohno, Y, Ohno, H (2000) Molecular beam epitaxy of GaSb with high concentration of Mn. Applied Surface Science, 159. 265-269 doi:10.1016/s0169-4332(00)00108-2
Shen, A., Matsukura, F., Guo, S.P., Sugawara, Y., Ohno, H., Tani, M., Abe, H., Liu, H.C. (1999) Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As. Journal of Crystal Growth, 201. 679-683 doi:10.1016/s0022-0248(98)01447-x
Guo, S.P, Shen, A, Matsukura, F, Ohno, Y, Ohno, H (1999) InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates. Journal of Crystal Growth, 201. 684-688 doi:10.1016/s0022-0248(98)01442-0
Sato, A, Ohtani, K, Terauchi, R, Ohno, Y, Matsukura, F, Ohno, H (1999) X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy. Journal of Crystal Growth, 201. 861-863 doi:10.1016/s0022-0248(98)01475-4
Yang, Jianrong, Yasuda, Haruyuki, Wang, Shanlee, Matsukura, Fumihiro, Ohno, Yuzo, Ohno, Hideo (2000) Surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As grown by molecular beam epitaxy. Applied Surface Science, 166. 242-246 doi:10.1016/s0169-4332(00)00429-3
Ohtani, K, Sato, A, Ohno, Y, Matsukura, F, Ohno, H (2000) Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates. Applied Surface Science, 159. 313-317 doi:10.1016/s0169-4332(00)00106-9
Shen, A., Matsukura, F., Sugawara, Y., Kuroiwa, T., Ohno, H., Oiwa, A., Endo, A., Katsumoto, S., Iye, Y. (1997) Epitaxy and properties of diluted magnetic III–V semiconductor heterostructures. Applied Surface Science, 113. 183-188 doi:10.1016/s0169-4332(96)00865-3
Guo, S. P., Ohno, H., Shen, A., Matsukura, F., Ohno, Y. (1997) InAs self-organized quantum dashes grown on GaAs (211)B. Applied Physics Letters, 70 (20). 2738-2740 doi:10.1063/1.119007
MAEDA, F, WATANABE, Y (2004) Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(001). Applied Surface Science, 237. 224-229 doi:10.1016/s0169-4332(04)01003-7
 
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