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Sugawara, Shigeru, Sasaki, Masahiro, Yamamoto, Shigehiko (1998) Scattering of NH3 from reconstructed GaAs(100) surfaces. Applied Surface Science, 130. 387-392 doi:10.1016/s0169-4332(98)00088-9

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Reference TypeJournal (article/letter/editorial)
TitleScattering of NH3 from reconstructed GaAs(100) surfaces
JournalApplied Surface Science
AuthorsSugawara, ShigeruAuthor
Sasaki, MasahiroAuthor
Yamamoto, ShigehikoAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00088-9Search in ResearchGate
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Mindat Ref. ID9900411Long-form Identifiermindat:1:5:9900411:0
GUID0
Full ReferenceSugawara, Shigeru, Sasaki, Masahiro, Yamamoto, Shigehiko (1998) Scattering of NH3 from reconstructed GaAs(100) surfaces. Applied Surface Science, 130. 387-392 doi:10.1016/s0169-4332(98)00088-9
Plain TextSugawara, Shigeru, Sasaki, Masahiro, Yamamoto, Shigehiko (1998) Scattering of NH3 from reconstructed GaAs(100) surfaces. Applied Surface Science, 130. 387-392 doi:10.1016/s0169-4332(98)00088-9
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Sugawara, Shigeru, Sasaki, Masahiro, Yamamoto, Shigehiko (1998) Atomic-Structure-Dependent Adsorption of Ammonia onto GaAs(111)B Surfaces. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1113
Sasaki, Masahiro, Sugawara, Shigeru, Yamamoto, Shigehiko (1999) Adsorption on to compound semiconductor surfaces studied by pulsed molecular-beam scattering. Surface Science, 433. 811-815 doi:10.1016/s0039-6028(99)00491-4
Yoshida, Seikoh, Sasaki, Masahiro (1998) GaAs growth selectivity using a GaN mask by MOMBE. Applied Surface Science, 130. 414-418 doi:10.1016/s0169-4332(98)00093-2
Ishidzuka, S., Igari, Y., Takaoka, T., Kusunoki, I. (1998) Nitridation of Si(100) surface with NH3. Applied Surface Science, 130. 107-111 doi:10.1016/s0169-4332(98)00034-8
Sasaki, Masahiro, Yoshida, Seikoh (1997) Reconstructed-structure-dependent surface reaction in metal-organic molecular beam epitaxy of GaAs. Applied Surface Science, 121. 73-79 doi:10.1016/s0169-4332(97)00261-4
Ishii, A, Kawamura, T (1998) Kinetics of homoepitaxial growth on GaAs(100) studied by two-component Monte Carlo simulation. Applied Surface Science, 130. 403-408 doi:10.1016/s0169-4332(98)00091-9
Komai, Masaaki, Sasaki, Masahiro, Ozawa, Ryo, Yamamoto, Shigehiko (1999) Microscopical analysis of structure and work function of Ba-covered Si(111)-(7Γ—7) surface. Applied Surface Science, 146. 158-161 doi:10.1016/s0169-4332(99)00010-0
Kawase, Makoto, Ishikawa, Yasuhiko, Fukui, Takashi (1998) Atomic structure studies of (113)B GaAs surfaces grown by metalorganic vapor phase epitaxy. Applied Surface Science, 130. 457-463 doi:10.1016/s0169-4332(98)00101-9
Shimaoka, Goro, Udagawa, Takashi (1999) Blueish green photoluminescence from nitrided GaAs(100) surfaces. Applied Surface Science, 142. 237-242 doi:10.1016/s0169-4332(98)00759-4
Sasaki, Masahiro, Yoshida, Seikoh (1996) Pulsed trimethylgallium beam scattering from variously reconstructed GaAs surfaces. Surface Science, 357. 863-867 doi:10.1016/0039-6028(96)00279-8
Hata, Masayuki, Murayama, Yukie, Hoshino, Tadatsugu, Tsuda, Minoru (1998) SB step growth mechanism on the reconstructed (001) surfaces of diamond structure crystals. Applied Surface Science, 130. 689-693 doi:10.1016/s0169-4332(98)00139-1
 
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