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Tabuchi, M, Fujita, K, Tsuchiya, J, Fujiwara, Y, Takeda, Y (1998) Thermal diffusion of Er atoms δ-doped in InP. Applied Surface Science, 130. 393-397 doi:10.1016/s0169-4332(98)00089-0

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Reference TypeJournal (article/letter/editorial)
TitleThermal diffusion of Er atoms δ-doped in InP
JournalApplied Surface Science
AuthorsTabuchi, MAuthor
Fujita, KAuthor
Tsuchiya, JAuthor
Fujiwara, YAuthor
Takeda, YAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00089-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900412Long-form Identifiermindat:1:5:9900412:9
GUID0
Full ReferenceTabuchi, M, Fujita, K, Tsuchiya, J, Fujiwara, Y, Takeda, Y (1998) Thermal diffusion of Er atoms δ-doped in InP. Applied Surface Science, 130. 393-397 doi:10.1016/s0169-4332(98)00089-0
Plain TextTabuchi, M, Fujita, K, Tsuchiya, J, Fujiwara, Y, Takeda, Y (1998) Thermal diffusion of Er atoms δ-doped in InP. Applied Surface Science, 130. 393-397 doi:10.1016/s0169-4332(98)00089-0
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Fujita, K., Tsuchiya, J., Ichiki, S., Hamamatsu, H., Matsumoto, N., Tabuchi, M., Fujiwara, Y., Takeda, Y. (1997) Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR scattering. Applied Surface Science, 117. 785-789 doi:10.1016/s0169-4332(97)80183-3
Ofuchi, H., Tsuchiya, J., Matsubara, N., Tabuchi, M., Fujiwara, Y., Takeda, Y. (1997) Atom configuration study of δ-doped Er in InP by fluorescence EXAFS. Applied Surface Science, 117. 781-784 doi:10.1016/s0169-4332(97)80182-1
Ofuchi, H, Kubo, T, Matsumoto, N, Tabuchi, M, Takeda, Y, Yamada, Y, Matsui, M (1998) Local structures around Fe atoms and magnetic properties of [fcc-Fe/Cu] multilayers. Applied Surface Science, 130. 899-903 doi:10.1016/s0169-4332(98)00173-1
Nukeaw, Jiti, Matsubara, Naoteru, Fujiwara, Yasufumi, Takeda, Yoshikazu (1997) Characterization of InP δ-doped with Er by FFT photoreflectance. Applied Surface Science, 117. 776-780 doi:10.1016/s0169-4332(97)80181-x
Nonogaki, Y., Iguchi, T., Fuchi, S., Fujiwara, Y., Takeda, Y. (1998) Nanometer-scale InAs islands grown on GaP (001) by organometallic vapor phase epitaxy. Applied Surface Science, 130. 724-728 doi:10.1016/s0169-4332(98)00144-5
Tabuchi, M., Kyouzu, H., Takemi, M., Takeda, Y. (2003) Composition dependence of InP/GaxIn1−xAsyP1−y/InP interface structures analyzed by X-ray CTR scattering measurements. Applied Surface Science, 216. 526-531 doi:10.1016/s0169-4332(03)00487-2
Tabuchi, M, Takahashi, R, Araki, M, Hirayama, K, Futakuchi, N, Shimogaki, Y, Nakano, Y, Takeda, Y (2000) X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes. Applied Surface Science, 159. 250-255 doi:10.1016/s0169-4332(00)00041-6
Yuhara, J., Takeda, H., Matsubara, N., Tabuchi, M., Fujiwara, Y., Morita, K., Takeda, Y. (1997) Structural analysis of erbium δ-doped InP(001) crystal by means of RBS channeling. Radiation Physics and Chemistry, 50. 193-197 doi:10.1016/s0969-806x(97)00041-8
Nonogaki, Y., Iguchi, T., Fujiwara, Y., Takeda, Y. (1997) Formation of InAs islands on InP (001) by droplet hetero-epitaxy. Applied Surface Science, 117. 665-669 doi:10.1016/s0169-4332(97)80161-4
Mano, T, Fujioka, H, Ono, K, Watanabe, Y, Oshima, M (1998) InAs nanocrystal growth on Si (100). Applied Surface Science, 130. 760-764 doi:10.1016/s0169-4332(98)00150-0
Ohtani, T., Tamiya, K., Takeda, Y., Urano, T., Hongo, S. (1998) Domain wall structure of Te/Si(001) surface studied by LEED. Applied Surface Science, 130. 112-117 doi:10.1016/s0169-4332(98)00035-x
 
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