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Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1998) Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth. Applied Surface Science, 130. 452-456 doi:10.1016/s0169-4332(98)00100-7

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Reference TypeJournal (article/letter/editorial)
TitleSelectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth
JournalApplied Surface Science
AuthorsKasu, MakotoAuthor
Makimoto, ToshikiAuthor
Kobayashi, NaokiAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00100-7Search in ResearchGate
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Mindat Ref. ID9900423Long-form Identifiermindat:1:5:9900423:5
GUID0
Full ReferenceKasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1998) Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth. Applied Surface Science, 130. 452-456 doi:10.1016/s0169-4332(98)00100-7
Plain TextKasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1998) Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth. Applied Surface Science, 130. 452-456 doi:10.1016/s0169-4332(98)00100-7
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1997) Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy. Japanese Journal of Applied Physics, 36. 3821-3826 doi:10.1143/jjap.36.3821
Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1997) Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale. Applied Physics Letters, 70 (9). 1161-1163 doi:10.1063/1.118513
Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1996) Scanning‐tunneling‐microscopy modification of nitrogen‐passivated GaAs (001) surfaces on a nanometer scale. Applied Physics Letters, 68 (13). 1811-1813 doi:10.1063/1.116021
Kasu, Makoto, Makimoto, Toshiki, Kobayashi, Naoki (1997) Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE. Journal of Crystal Growth, 173 (3). 589-591 doi:10.1016/s0022-0248(96)01096-2
Kasu, Makoto, Kobayashi, Naoki (1995) Surface diffusion of AlAs on GaAs in metalorganic vapor phase epitaxy studied by high‐vacuum scanning tunneling microscopy. Applied Physics Letters, 67 (19). 2842-2844 doi:10.1063/1.114803
Kasu, Makoto, Kobayashi, Naoki (1995) Surface‐diffusion and step‐bunching mechanisms of metalorganic vapor‐phase epitaxy studied by high‐vacuum scanning tunneling microscopy. Journal of Applied Physics, 78 (5). 3026-3035 doi:10.1063/1.360053
Miyake, Koji, Ishida, Masahiko, Shigekawa, Hidemi (1998) Selective chemical reaction of HBO2 molecules on the Si(111)-7×7 surface studied by scanning tunneling microscopy. Applied Surface Science, 130. 78-83 doi:10.1016/s0169-4332(98)00029-4
Fukuda, T, Ogino, T (1998) Initial oxidation stage of the Ge(100) 2×1 surface studied by scanning tunneling microscopy and ultra-violet photoelectron spectroscopy. Applied Surface Science, 130. 165-169 doi:10.1016/s0169-4332(98)00044-0
An, Toshu, Yoshimura, Masamichi, Ueda, Kazuyuki (1998) Scanning tunneling microscopy on Sn/Si(110) system. Applied Surface Science, 130. 118-122 doi:10.1016/s0169-4332(98)00036-1
Kasu, Makoto, Kobayashi, Naoki (1996) Erratum: ‘‘Surface‐diffusion and step‐bunching mechanisms of metalorganic vapor‐phase epitaxy studied by high‐vacuum scanning tunneling microscopy’’ [J. Appl. Phys. 78, 3026 (1995)]. Journal of Applied Physics, 79 (3). 1822-1823 doi:10.1063/1.362716
Ohkouchi, Shunsuke, Gomyo, Akiko (1998) Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP. Applied Surface Science, 130. 447-451 doi:10.1016/s0169-4332(98)00099-3
 
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