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Shimizu, Tetsuo, Ando, Atsushi, Tokumoto, Hiroshi (1998) Control of step structures of Si(001) by highly doped As. Applied Surface Science, 130. 771-775 doi:10.1016/s0169-4332(98)00152-4

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Reference TypeJournal (article/letter/editorial)
TitleControl of step structures of Si(001) by highly doped As
JournalApplied Surface Science
AuthorsShimizu, TetsuoAuthor
Ando, AtsushiAuthor
Tokumoto, HiroshiAuthor
Year1998 (June)Volume130
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00152-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9900469Long-form Identifiermindat:1:5:9900469:7
GUID0
Full ReferenceShimizu, Tetsuo, Ando, Atsushi, Tokumoto, Hiroshi (1998) Control of step structures of Si(001) by highly doped As. Applied Surface Science, 130. 771-775 doi:10.1016/s0169-4332(98)00152-4
Plain TextShimizu, Tetsuo, Ando, Atsushi, Tokumoto, Hiroshi (1998) Control of step structures of Si(001) by highly doped As. Applied Surface Science, 130. 771-775 doi:10.1016/s0169-4332(98)00152-4
In(n.d.) Applied Surface Science Vol. 130. Elsevier BV

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Ando, Atsushi, Sakamoto, Kunihiro, Miki, Kazushi, Matsumoto, Kazuhiko, Sakamoto, Tsunenori (1998) Oxidation of spatially controlled atomically flat Si(001) surface. Applied Surface Science, 130. 197-201 doi:10.1016/s0169-4332(98)00050-6
Latyshev, A.V, Litvin, L.V, Aseev, A.L (1998) Peculiarities of step bunching on Si(001) surface induced by DC heating. Applied Surface Science, 130. 139-145 doi:10.1016/s0169-4332(98)00040-3
Sumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1998) Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering. Applied Surface Science, 130. 133-138 doi:10.1016/s0169-4332(98)00039-7
Mizutani, Wataru, Ishida, Takao, Tokumoto, Hiroshi (1998) Monte Carlo simulation of phase-separated self-assembled films. Applied Surface Science, 130. 792-796 doi:10.1016/s0169-4332(98)00156-1
Ando, Atsushi, Sakamoto, Kunihiro, Miki, Kazushi, Matsumoto, Kazuhiko, Sakamoto, Tsunenori (1999) Characterization of ultrathin SiOx layers formed on a spatially controlled atomic-step-free Si(001) surface. Applied Surface Science, 144. 589-592 doi:10.1016/s0169-4332(98)00871-x
Hasunuma, R., Komeda, T., Tokumoto, H. (1998) Electric properties of nanoscale contacts on Si(111) surfaces. Applied Surface Science, 130. 84-89 doi:10.1016/s0169-4332(98)00030-0
Ando, Atsushi, Miki, Kazushi, Matsumoto, Kazuhiko, Shimizu, Tetsuo, Morita, Yukinori, Tokumoto, Hiroshi (1996) Surface Observation and Modification of Si Substrate inNH4FandH2SO4Solutions. Japanese Journal of Applied Physics, 35. 1064-1068 doi:10.1143/jjap.35.1064
Shioda, Ryu, van der Weide, Jaap (1998) Observation of hydrogen adsorption on Si(001) by reflectance difference spectroscopy. Applied Surface Science, 130. 266-270 doi:10.1016/s0169-4332(98)00068-3
Jeong, Sukmin, Oshiyama, Atsushi (1998) Barrierless bond breaking and exchange diffusion on Si(100)–H. Applied Surface Science, 130. 287-291 doi:10.1016/s0169-4332(98)00072-5
Kaneda, G., Murata, J., Takeuchi, T., Sanada, N., Fukuda, Y. (1998) Adsorption and decomposition of triethylindium on Si(001) and GaP(001) studied by HREELS and TPD. Applied Surface Science, 130. 419-424 doi:10.1016/s0169-4332(98)00094-4
Watanabe, Satoru (1998) Step structure on H/Si formed in hot water as revealed with angle-resolved polarized infrared spectroscopy. Applied Surface Science, 130. 231-236 doi:10.1016/s0169-4332(98)00056-7
 
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