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Chen, Yung-Hsin, Hu, Chen-Ti, Lin, I-Nan (1999) Field emission characteristics of boron-doped diamond films prepared by MPE-CVD. Applied Surface Science, 142. 516-520 doi:10.1016/s0169-4332(98)00687-4

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Reference TypeJournal (article/letter/editorial)
TitleField emission characteristics of boron-doped diamond films prepared by MPE-CVD
JournalApplied Surface Science
AuthorsChen, Yung-HsinAuthor
Hu, Chen-TiAuthor
Lin, I-NanAuthor
Year1999 (April)Volume142
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(98)00687-4Search in ResearchGate
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Mindat Ref. ID9901003Long-form Identifiermindat:1:5:9901003:2
GUID0
Full ReferenceChen, Yung-Hsin, Hu, Chen-Ti, Lin, I-Nan (1999) Field emission characteristics of boron-doped diamond films prepared by MPE-CVD. Applied Surface Science, 142. 516-520 doi:10.1016/s0169-4332(98)00687-4
Plain TextChen, Yung-Hsin, Hu, Chen-Ti, Lin, I-Nan (1999) Field emission characteristics of boron-doped diamond films prepared by MPE-CVD. Applied Surface Science, 142. 516-520 doi:10.1016/s0169-4332(98)00687-4
In(n.d.) Applied Surface Science Vol. 142. Elsevier BV

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Chen, Yung-Hsin, Hu, Chen-Ti, Lin, I-Nan (1997) Selected-area deposition of diamond films on surfaces with microwave plasma enhanced CVD. Applied Surface Science, 113. 231-237 doi:10.1016/s0169-4332(96)00769-6
Chen, Yung-Hsin, Hu, Chen-Ti, Lin, I-Nan (1999) Defect structure and electron field-emission properties of boron-doped diamond films. Applied Physics Letters, 75 (18). 2857-2859 doi:10.1063/1.125173
Perng, Kuoguang, Liu, Kuo-Shung, Lin, I.-Nan (1999) Modification on the band structure and the related emission characteristics of defective diamond films doped with boron. Applied Surface Science, 142. 494-498 doi:10.1016/s0169-4332(98)00720-x
Cheng, Hsiu-Fung, Chuang, F.Y, Tsai, Chun-Hui, Wang, Wen-Chun, Huang, Ching-Ming, Lin, I-Nan (1999) Boron-doping effect on the field emission behavior of pulse laser deposited diamond-like carbon films. Applied Surface Science, 142. 504-509 doi:10.1016/s0169-4332(98)00716-8
Chen, Yung-Hsin, Hu, Chen-Ti, Lin, I-Nan (1998) Modification on the electron field emission properties of diamond films: The effect of bias voltage applied in situ. Journal of Applied Physics, 84 (7). 3890-3894 doi:10.1063/1.368568
Lin, Cheng-Hsiung, Hsu, Wen-Dung, Lin, I-Nan (1999) Ferroelectric properties of Pb(Zr0.52Ti0.48)O3 thin films prepared by metal–organic decomposition process. Applied Surface Science, 142. 418-421 doi:10.1016/s0169-4332(98)00680-1
Kwo, Jon-Lian, Yokoyama, Meiso, Lin, I-Nan (1999) Effects of composition on field emission character of tetrahedral amorphous carbon. Applied Surface Science, 142. 521-526 doi:10.1016/s0169-4332(98)00688-6
Hsiao, H.L, Shieh, Y.Y, Lee, R.S, Wang, R.Y, Wang, K.C, Hwang, H.L, Yang, A.B (1999) Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD. Applied Surface Science, 142. 400-406 doi:10.1016/s0169-4332(98)00683-7
Kimura, Chiharu, Kuriyama, Kenji, Koizumi, Satoshi, Kamo, Mutsukazu, Sugino, Takashi (1999) Field emission characteristics of phosphorus-doped homoepitaxial diamond films. Applied Surface Science, 146. 295-298 doi:10.1016/s0169-4332(99)00009-4
Chen, J.C, Shen, G.H, Chen, L.J (1999) Interfacial reactions of Gd thin films on (111) and (001)Si. Applied Surface Science, 142. 291-294 doi:10.1016/s0169-4332(98)00639-4
Chen, J.C, Shen, G.H, Chen, L.J (1999) Formation of Gd oxide thin films on (111)Si. Applied Surface Science, 142. 120-123 doi:10.1016/s0169-4332(98)00663-1
 
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