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Brenot, R, Drévillon, B, Bulkin, P, Roca i Cabarrocas, P, Vanderhaghen, R (2000) Process monitoring of semiconductor thin films and interfaces by spectroellipsometry. Applied Surface Science, 154. 283-290 doi:10.1016/s0169-4332(99)00501-2

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Reference TypeJournal (article/letter/editorial)
TitleProcess monitoring of semiconductor thin films and interfaces by spectroellipsometry
JournalApplied Surface Science
AuthorsBrenot, RAuthor
Drévillon, BAuthor
Bulkin, PAuthor
Roca i Cabarrocas, PAuthor
Vanderhaghen, RAuthor
Year2000 (February)Volume154
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00501-2Search in ResearchGate
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Mindat Ref. ID9901732Long-form Identifiermindat:1:5:9901732:7
GUID0
Full ReferenceBrenot, R, Drévillon, B, Bulkin, P, Roca i Cabarrocas, P, Vanderhaghen, R (2000) Process monitoring of semiconductor thin films and interfaces by spectroellipsometry. Applied Surface Science, 154. 283-290 doi:10.1016/s0169-4332(99)00501-2
Plain TextBrenot, R, Drévillon, B, Bulkin, P, Roca i Cabarrocas, P, Vanderhaghen, R (2000) Process monitoring of semiconductor thin films and interfaces by spectroellipsometry. Applied Surface Science, 154. 283-290 doi:10.1016/s0169-4332(99)00501-2
In(n.d.) Applied Surface Science Vol. 154. Elsevier BV

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Roca i Cabarrocas, P., Brenot, R., Bulkin, P., Vanderhaghen, R., Drévillon, B., French, I. (1999) Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique. Journal of Applied Physics, 86 (12). 7079-7082 doi:10.1063/1.371795
Brenot, R, Bulkin, P, Roca i Cabarrocas, P, Drévillon, B, Vanderhaghen, R (1998) In situ characterization of microcrystalline silicon by time resolved microwave conductivity. Journal of Non-Crystalline Solids, 227. 1001-1005 doi:10.1016/s0022-3093(98)00320-2
Brenot, R, Vanderhaghen, R, Drévillon, B, Roca i Cabarrocas, P (2000) Measurement of transversal ambipolar diffusion coefficient in microcrystalline silicon. Journal of Non-Crystalline Solids, 266. 336-340 doi:10.1016/s0022-3093(99)00721-8
Brenot, R., Vanderhaghen, R., Drévillon, B., Roca i Cabarrocas, P. (1999) Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth. Applied Physics Letters, 74 (1). 58-60 doi:10.1063/1.123132
Stchakovsky, M., Drévillon, B., Cabarrocas, P. Roca i (1991) Insituinvestigation of the amorphous silicon/silicon nitride interfaces by spectroellipsometry. Journal of Applied Physics, 70 (4). 2132-2135 doi:10.1063/1.349450
Brenot, R., Kildemo, Morten, Drévillon, B. (1998) Spectroellipsometric Method for Process Monitoring of Semiconductor Thin Films and Interfaces. Materials Science Forum, 287. 151-158 doi:10.4028/www.scientific.net/msf.287-288.151
Fontcuberta i Morral, A., Brenot, R., Hamers, E.A.G., Vanderhaghen, R., Roca i Cabarrocas, P. (2000) In situ investigation of polymorphous silicon deposition. Journal of Non-Crystalline Solids, 266. 48-53 doi:10.1016/s0022-3093(99)00723-1
Kildemo, Morten, Brenot, Romain, Drévillon, Bernard (1998) Spectroellipsometric method for process monitoring semiconductor thin films and interfaces. Applied Optics, 37. 5145pp. doi:10.1364/ao.37.005145
Drévillon, B. (1993) In situ studies of semiconductor processes by spectroellipsometry. Applied Surface Science, 63. 27-34 doi:10.1016/0169-4332(93)90059-k
Bulkin, P, Brenot, R, Drévillon, B, Vanderhaghen, R (1998) Structure and transport properties of integrated distributed electron cyclotron resonance grown micro-crystalline silicon. Journal of Non-Crystalline Solids, 231 (3) 268-272 doi:10.1016/s0022-3093(98)00451-7
Yakovlev, V., Drévillon, B., Layadi, N., Roca i Cabarrocas, P. (1993) Real‐time spectroellipsometry investigation of the interaction of silane with a Pd thin film: Formation of palladium silicides. Journal of Applied Physics, 74 (4). 2535-2542 doi:10.1063/1.354694
 
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