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Briantseva, T.A, Lebedeva, Z.M, Lioubtchenko, D.V, Markov, I.A, Nolan, M, Perova, T.S, Moore, R.A (2000) Precise chemical analysis development for silicon wafers after rapid thermal processing. Applied Surface Science, 156. 21-25 doi:10.1016/s0169-4332(99)00509-7

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Reference TypeJournal (article/letter/editorial)
TitlePrecise chemical analysis development for silicon wafers after rapid thermal processing
JournalApplied Surface Science
AuthorsBriantseva, T.AAuthor
Lebedeva, Z.MAuthor
Lioubtchenko, D.VAuthor
Markov, I.AAuthor
Nolan, MAuthor
Perova, T.SAuthor
Moore, R.AAuthor
Year2000 (February)Volume156
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(99)00509-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9901756Long-form Identifiermindat:1:5:9901756:7
GUID0
Full ReferenceBriantseva, T.A, Lebedeva, Z.M, Lioubtchenko, D.V, Markov, I.A, Nolan, M, Perova, T.S, Moore, R.A (2000) Precise chemical analysis development for silicon wafers after rapid thermal processing. Applied Surface Science, 156. 21-25 doi:10.1016/s0169-4332(99)00509-7
Plain TextBriantseva, T.A, Lebedeva, Z.M, Lioubtchenko, D.V, Markov, I.A, Nolan, M, Perova, T.S, Moore, R.A (2000) Precise chemical analysis development for silicon wafers after rapid thermal processing. Applied Surface Science, 156. 21-25 doi:10.1016/s0169-4332(99)00509-7
In(n.d.) Applied Surface Science Vol. 156. Elsevier BV

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Briantseva, T.A, Lebedeva, Z.M, Markov, I.A, Bullough, T.J, Lioubtchenko, D.V (1999) Process-induced modification to the surface of crystalline GaAs measured by photometry. Applied Surface Science, 143. 223-228 doi:10.1016/s0169-4332(98)00893-9
Lioubtchenko, D.V., Markov, I.A., Briantseva, T.A. (2003) GaAs surface modifications under Au evaporating flux. Applied Surface Science, 211. 335-340 doi:10.1016/s0169-4332(03)00356-8
Lioubtchenko, D.V, Markov, I.A, Briantseva, T.A (2002) GaAs surface modifications under light irradiation in vacuum. Applied Surface Science, 195. 42-47 doi:10.1016/s0169-4332(02)00535-4
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