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Radtke, C, Baumvol, I.J.R, Stedile, F.C, Vickridge, I.C, Trimaille, I, Ganem, J.-J, Rigo, S (2003) Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling. Applied Surface Science, 212. 570-574 doi:10.1016/s0169-4332(03)00403-3

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Reference TypeJournal (article/letter/editorial)
TitleThermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling
JournalApplied Surface Science
AuthorsRadtke, CAuthor
Baumvol, I.J.RAuthor
Stedile, F.CAuthor
Vickridge, I.CAuthor
Trimaille, IAuthor
Ganem, J.-JAuthor
Rigo, SAuthor
Year2003 (May)Volume212
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00403-3Search in ResearchGate
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Mindat Ref. ID9905138Long-form Identifiermindat:1:5:9905138:5
GUID0
Full ReferenceRadtke, C, Baumvol, I.J.R, Stedile, F.C, Vickridge, I.C, Trimaille, I, Ganem, J.-J, Rigo, S (2003) Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling. Applied Surface Science, 212. 570-574 doi:10.1016/s0169-4332(03)00403-3
Plain TextRadtke, C, Baumvol, I.J.R, Stedile, F.C, Vickridge, I.C, Trimaille, I, Ganem, J.-J, Rigo, S (2003) Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling. Applied Surface Science, 212. 570-574 doi:10.1016/s0169-4332(03)00403-3
In(n.d.) Applied Surface Science Vol. 212. Elsevier BV

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Vickridge, I. C., Trimaille, I., Ganem, J.-J., Rigo, S., Radtke, C., Baumvol, I. J. R., Stedile, F. C. (2002) Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide. Physical Review Letters, 89 (25). doi:10.1103/physrevlett.89.256102
Krug, C., Stedile, F.C., Radtke, C., da Rosa, E.B.O., Morais, J., Freire, F.L., Baumvol, I.J.R. (2003) Characterization by ion beams of surfaces and interfaces of alternative materials for future microelectronic devices. Applied Surface Science, 212. 556-562 doi:10.1016/s0169-4332(03)00405-7
Trimaille, Isabelle, Ganem, Jean-Jacques, Vickridge, Ian C., Rigo, Serge, Battistig, Gabor, Szilagyi, Edit, Baumvol, Israel J., Radtke, Claudio, Stedile, Fernanda C. (2004) Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 219. 914-918 doi:10.1016/j.nimb.2004.01.187
Battistig, G., Amsel, G., Trimaille, I., Ganem, J.-J., Rigo, S., Stedile, F.C., Baumvol, I.J.R., Schulte, W.H., Becker, H.W. (1994) High resolution low energy resonance depth profiling of18O in near surface isotopic tracing studies. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85 (1). 326-330 doi:10.1016/0168-583x(94)95837-8
Baumvol, I. J. R., Stedile, F. C., Ganem, J.-J., Trimaille, I., Rigo, S. (1997) Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O. Applied Physics Letters, 70 (15). 2007-2009 doi:10.1063/1.118804
Baumvol, I.J.R., Borucki, L., Chaumont, J., Ganem, J.-J., Kaytasov, O., Piel, N., Rigo, S., Schulte, W.H., Stedile, F.C., Trimaille, I. (1996) Isotopic tracing of Si during thermal growth of Si3N4 ultrathin films. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 118 (1). 499-504 doi:10.1016/0168-583x(95)01478-0
Baumvol, I.J.R., Stedile, F.C., Ganem, J.-J., Rigo, S., Trimaille, I. (1995) Atomic transport during thermal growth of silicon nitride. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 99 (1). 462-467 doi:10.1016/0168-583x(95)00211-1
Ganem, J.‐J., Rigo, S., Trimaille, I., Baumvol, I. J. R., Stedile, F. C. (1996) Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods. Applied Physics Letters, 68 (17). 2366-2368 doi:10.1063/1.116135
Gosset, L.G., Ganem, J.-J., Trimaille, I., Rigo, S., Rochet, F., Dufour, G., Jolly, F., Stedile, F.C., Baumvol, I.J.R. (1998) High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 136. 521-527 doi:10.1016/s0168-583x(97)00731-3
Baumvol, I. J. R., Stedile, F. C., Ganem, J.‐J., Trimaille, I., Rigo, S. (1996) Nitrogen transport during rapid thermal growth of silicon oxynitride films in N2O. Applied Physics Letters, 69 (16). 2385-2387 doi:10.1063/1.117645
Ganem, J.-J., Trimaille, I., André, P., Rigo, S., Stedile, F. C., Baumvol, I. J. R. (1997) Diffusion of near surface defects during the thermal oxidation of silicon. Journal of Applied Physics, 81 (12). 8109-8111 doi:10.1063/1.365420
 
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