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Kitagawa, Isao, Maruizumi, Takuya (2003) New intrinsic pair defects in silicon dioxide interface. Applied Surface Science, 216. 264-269 doi:10.1016/s0169-4332(03)00379-9

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Reference TypeJournal (article/letter/editorial)
TitleNew intrinsic pair defects in silicon dioxide interface
JournalApplied Surface Science
AuthorsKitagawa, IsaoAuthor
Maruizumi, TakuyaAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00379-9Search in ResearchGate
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Mindat Ref. ID9905256Long-form Identifiermindat:1:5:9905256:0
GUID0
Full ReferenceKitagawa, Isao, Maruizumi, Takuya (2003) New intrinsic pair defects in silicon dioxide interface. Applied Surface Science, 216. 264-269 doi:10.1016/s0169-4332(03)00379-9
Plain TextKitagawa, Isao, Maruizumi, Takuya (2003) New intrinsic pair defects in silicon dioxide interface. Applied Surface Science, 216. 264-269 doi:10.1016/s0169-4332(03)00379-9
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Ohashi, Tetsuya, Sato, Michihiro, Maruizumi, Takuya, Kitagawa, Isao (2003) Simulation of dislocation accumulation in ULSI cells with STI structure. Applied Surface Science, 216. 340-346 doi:10.1016/s0169-4332(03)00421-5
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