Doi, Kentaro, Nakamura, Koichi, Tachibana, Akitomo (2003) First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges. Applied Surface Science, 216. 463-470 doi:10.1016/s0169-4332(03)00407-0
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges | ||
Journal | Applied Surface Science | ||
Authors | Doi, Kentaro | Author | |
Nakamura, Koichi | Author | ||
Tachibana, Akitomo | Author | ||
Year | 2003 (June) | Volume | 216 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/s0169-4332(03)00407-0Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 9905273 | Long-form Identifier | mindat:1:5:9905273:7 |
GUID | 0 | ||
Full Reference | Doi, Kentaro, Nakamura, Koichi, Tachibana, Akitomo (2003) First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges. Applied Surface Science, 216. 463-470 doi:10.1016/s0169-4332(03)00407-0 | ||
Plain Text | Doi, Kentaro, Nakamura, Koichi, Tachibana, Akitomo (2003) First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges. Applied Surface Science, 216. 463-470 doi:10.1016/s0169-4332(03)00407-0 | ||
In | (n.d.) Applied Surface Science Vol. 216. Elsevier BV |
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