Vote for your favorite mineral in #MinCup25! - Topaz vs. Kyanite
It's a battle of high-pressure colourful beauties of #topaz vs #kyanite. Which can stand the heat of round 1?
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Takahashi, Ichirou, Sakurai, Hiroyuki, Yamada, Atsuhiko, Funaiwa, Kiyoshi, Hirai, Kentarou, Urabe, Shinichi, Goto, Tetsuya, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2003) Oxygen radical treatment applied to ferroelectric thin films. Applied Surface Science, 216. 239-245 doi:10.1016/s0169-4332(03)00424-0

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleOxygen radical treatment applied to ferroelectric thin films
JournalApplied Surface Science
AuthorsTakahashi, IchirouAuthor
Sakurai, HiroyukiAuthor
Yamada, AtsuhikoAuthor
Funaiwa, KiyoshiAuthor
Hirai, KentarouAuthor
Urabe, ShinichiAuthor
Goto, TetsuyaAuthor
Hirayama, MasakiAuthor
Teramoto, AkinobuAuthor
Sugawa, ShigetoshiAuthor
Ohmi, TadahiroAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00424-0Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9905280Long-form Identifiermindat:1:5:9905280:7
GUID0
Full ReferenceTakahashi, Ichirou, Sakurai, Hiroyuki, Yamada, Atsuhiko, Funaiwa, Kiyoshi, Hirai, Kentarou, Urabe, Shinichi, Goto, Tetsuya, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2003) Oxygen radical treatment applied to ferroelectric thin films. Applied Surface Science, 216. 239-245 doi:10.1016/s0169-4332(03)00424-0
Plain TextTakahashi, Ichirou, Sakurai, Hiroyuki, Yamada, Atsuhiko, Funaiwa, Kiyoshi, Hirai, Kentarou, Urabe, Shinichi, Goto, Tetsuya, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2003) Oxygen radical treatment applied to ferroelectric thin films. Applied Surface Science, 216. 239-245 doi:10.1016/s0169-4332(03)00424-0
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Takahashi, Ichirou, Sakurai, Hiroyuki, Yamada, Atsuhiko, Funaiwa, Kiyoshi, Hirai, Kentaro, Urabe, Shinichi, Goto, Tetsuya, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2003) Ferroelectric Sr2(Ta1-x, Nbx)2O7with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment. Japanese Journal of Applied Physics, 42. 2050-2054 doi:10.1143/jjap.42.2050
Takahashi, Ichirou, Sakurai, Hiroyuki, Yamada, Atsuhiko, Funaiwa, Kiyoshi, Goto, Tetsuya, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2004) A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7Thin Film Controlling the Crystal Orientation on an IrO2Substrate for One-Transistor-Type Ferroelectric Memory Device. Japanese Journal of Applied Physics, 43 (4) 2194-2198 doi:10.1143/jjap.43.2194
Ohshima, Ichiro, Cheng, Weitao, Ono, Yasuhiro, Higuchi, Masaaki, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2003) Reliability of silicon nitride gate dielectrics grown at 400 °C formed by microwave-excited high-density plasma. Applied Surface Science, 216. 246-251 doi:10.1016/s0169-4332(03)00423-9
Takahashi, Ichirou, Sakurai, Hiroyuki, Isogai, Tatsunori, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2006) Relationship between Sr2(Ta1-x,Nbx)2O7Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation. Japanese Journal of Applied Physics, 45 (4) 3207-3212 doi:10.1143/jjap.45.3207
Takahashi, Ichirou, Funaiwa, Kiyoshi, Azumi, Keita, Yamashita, Satoru, Shirai, Yasuyuki, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2007) Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7Thin Film on Amorphous SiO2. Japanese Journal of Applied Physics, 46 (4) 2200-2204 doi:10.1143/jjap.46.2200
Takahashi, Ichirou, Hirayama, Masaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2007) Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO2by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device. Japanese Journal of Applied Physics, 46 (4) 2205-2210 doi:10.1143/jjap.46.2205
Takahashi, Ichirou, Azumi, Keita, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2006) Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor. Japanese Journal of Applied Physics, 45 (9) 7336-7340 doi:10.1143/jjap.45.7336
Tanaka, Hiroaki, Chuanjie, Zhong, Hayakawa, Yukio, Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro (2003) High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma. Japanese Journal of Applied Physics, 42. 1911-1915 doi:10.1143/jjap.42.1911
Tanaka, Koutarou, Watanabe, Kazufumi, Ishino, Hideaki, Sugawa, Shigetoshi, Teramoto, Akinobu, Hirayama, Masaki, Ohmi, Tadahiro (2003) A Technology for Reducing Flicker Noise for ULSI Applications. Japanese Journal of Applied Physics, 42. 2106-2109 doi:10.1143/jjap.42.2106
Goto, Tetsuya, Yamauchi, Hiroshi, Kato, Takeyoshi, Terasaki, Masato, Teramoto, Akinobu, Hirayama, Masaki, Sugawa, Shigetoshi, Ohmi, Tadahiro (2004) High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment. Japanese Journal of Applied Physics, 43 (4) 1784-1787 doi:10.1143/jjap.43.1784
Itoh, Azumi, Inokuchi, Atsutoshi, Yasuda, Seiji, Teramoto, Akinobu, Goto, Tetsuya, Hirayama, Masaki, Ohmi, Tadahiro (2008) Low-Dielectric-Constant Nonporous Fluorocarbon Films for Interlayer Dielectric. Japanese Journal of Applied Physics, 47 (4) 2515-2520 doi:10.1143/jjap.47.2515
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 13, 2025 03:08:57
Go to top of page