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Hiratani, Masahiko, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Saito, Shin-Ichi (2003) Built-in interface in high-κ gate stacks. Applied Surface Science, 216. 208-214 doi:10.1016/s0169-4332(03)00432-x

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Reference TypeJournal (article/letter/editorial)
TitleBuilt-in interface in high-κ gate stacks
JournalApplied Surface Science
AuthorsHiratani, MasahikoAuthor
Torii, KazuyoshiAuthor
Shimamoto, YasuhiroAuthor
Saito, Shin-IchiAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00432-xSearch in ResearchGate
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Mindat Ref. ID9905288Long-form Identifiermindat:1:5:9905288:9
GUID0
Full ReferenceHiratani, Masahiko, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Saito, Shin-Ichi (2003) Built-in interface in high-κ gate stacks. Applied Surface Science, 216. 208-214 doi:10.1016/s0169-4332(03)00432-x
Plain TextHiratani, Masahiko, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Saito, Shin-Ichi (2003) Built-in interface in high-κ gate stacks. Applied Surface Science, 216. 208-214 doi:10.1016/s0169-4332(03)00432-x
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Hiratani, Masahiko, Saito, Shin-ich, Shimamoto, Yasuhiro, Torii, Kazuyoshi (2002) Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks. Japanese Journal of Applied Physics, 41. 4521-4522 doi:10.1143/jjap.41.4521
Saito, Shin-ichi, Matsui, Yuichi, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Hiratani, Masahiko, Kimura, Shin'ichiro (2003) Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l1425
Hiratani, Masahiko, Kadoshima, Masaru, Hirano, Tatsumi, Shimamoto, Yasuhiro, Matsui, Yuichi, Nabatame, Toshihide, Torii, Kazuyoshi, Kimura, Shinichiro (2003) Ultra-thin titanium oxide film with a rutile-type structure. Applied Surface Science, 207. 13-19 doi:10.1016/s0169-4332(02)01228-x
Saito, Shin-ichi, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Tonomura, Osamu, Hisamoto, Digh, Onai, Takahiro, Hiratani, Masahiko, Kimura, Shin’ichiro, Manabe, Yukiko, Caymax, Matty, Maes, Jan Willem (2005) Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks. Journal of Applied Physics, 98 (11). 113706pp. doi:10.1063/1.2135878
Saito, Shin-ichi, Torii, Kazuyoshi, Shimamoto, Yasuhiro, Tsujikawa, Shimpei, Hamamura, Hirotaka, Tonomura, Osamu, Mine, Toshiyuki, Hisamoto, Digh, Onai, Takahiro, Yugami, Jiro, Hiratani, Masahiko, Kimura, Shin’ichiro (2004) Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics. Applied Physics Letters, 84 (8). 1395-1397 doi:10.1063/1.1650551
Saito, Shin-ichi, Torii, Kazuyoshi, Hiratani, Masahiko, Onai, Takahiro (2002) Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors. Applied Physics Letters, 81 (13). 2391-2393 doi:10.1063/1.1510178
Fujisaki, Yoshihisa, Torii, Kazuyoshi, Hiratani, Masahiko, Kushida-Abdelghafar, Keiko (1997) Analysis and control of surface degenerated layers grown on thin Pb(Zr, Ti)O3 films. Applied Surface Science, 108. 365-369 doi:10.1016/s0169-4332(96)00607-1
Kimura, Kenji, Nakajima, Kaoru (2003) Compositional transition layer in SiO2/Si interface observed by high-resolution RBS. Applied Surface Science, 216. 283-286 doi:10.1016/s0169-4332(03)00386-6
(2003) Author Index. Applied Surface Science, 214. doi:10.1016/s0169-4332(03)00690-1
(2003) Subject Index. Applied Surface Science, 214. doi:10.1016/s0169-4332(03)00691-3
(2003) Publisher's Note. Applied Surface Science, 214. doi:10.1016/s0169-4332(03)00787-6
 
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