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Takahashi, Kenji, Nakayama, Makoto, Yokoyama, Shintaro, Kimura, Takeshi, Tokumitsu, Eisuke, Funakubo, Hiroshi (2003) Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precursor and their properties. Applied Surface Science, 216. 296-301 doi:10.1016/s0169-4332(03)00435-5

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precursor and their properties
JournalApplied Surface Science
AuthorsTakahashi, KenjiAuthor
Nakayama, MakotoAuthor
Yokoyama, ShintaroAuthor
Kimura, TakeshiAuthor
Tokumitsu, EisukeAuthor
Funakubo, HiroshiAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00435-5Search in ResearchGate
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Mindat Ref. ID9905291Long-form Identifiermindat:1:5:9905291:3
GUID0
Full ReferenceTakahashi, Kenji, Nakayama, Makoto, Yokoyama, Shintaro, Kimura, Takeshi, Tokumitsu, Eisuke, Funakubo, Hiroshi (2003) Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precursor and their properties. Applied Surface Science, 216. 296-301 doi:10.1016/s0169-4332(03)00435-5
Plain TextTakahashi, Kenji, Nakayama, Makoto, Yokoyama, Shintaro, Kimura, Takeshi, Tokumitsu, Eisuke, Funakubo, Hiroshi (2003) Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precursor and their properties. Applied Surface Science, 216. 296-301 doi:10.1016/s0169-4332(03)00435-5
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Hino, Shiro, Nakayama, Makoto, Takahashi, Kenji, Funakubo, Hiroshi, Tokumitsu, Eisuke (2003) Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors. Japanese Journal of Applied Physics, 42. 6015-6018 doi:10.1143/jjap.42.6015
Takahashi, Kenji, Funakubo, Hiroshi, Hino, Shiro, Nakayama, Makoto, Ohashi, Naoki, Kiguchi, Takanori, Tokumitsu, Eisuke (2004) Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor. Journal of Materials Research, 19 (2) 584-589 doi:10.1557/jmr.2004.19.2.584
Nakayama, Makoto, Takahashi, Kenji, Hino, Shiro, Funakubo, Hiroshi, Tokumitsu, Eisuke (2004) Source Gas Pulse-Introduced MOCVD of HfO[sub 2] Thin Films using Hf(O-t-C[sub 4]H[sub 9])[sub 4]. Journal of the Electrochemical Society, 151. doi:10.1149/1.1802152
Sung-Min Yoon, , Eisuke Tokumitsu, , Hiroshi Ishiwara, (1997) Preparation of PbZrxTi1 βˆ’ xO3/La1 βˆ’ xSrxCoO3 heterostructures using the sol-gel method and their electrical properties. Applied Surface Science, 117. 447-452 doi:10.1016/s0169-4332(97)80123-7
Hayashi, Tomoki, Yoshihara, Makoto, Ohmi, Syun-ichiro, Tokumitsu, Eisuke, Ishiwara, Hiroshi (1997) Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer. Applied Surface Science, 117. 418-422 doi:10.1016/s0169-4332(97)80117-1
(2003) Subject Index. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00785-2
Kimura, Kenji, Nakajima, Kaoru (2003) Compositional transition layer in SiO2/Si interface observed by high-resolution RBS. Applied Surface Science, 216. 283-286 doi:10.1016/s0169-4332(03)00386-6
Satoh, Issei, Kobayashi, Takeshi (2003) Magnetic and optical properties of novel magnetic semiconductor Cr-doped ZnO and its application to all oxide p–i–n diode. Applied Surface Science, 216. 603-606 doi:10.1016/s0169-4332(03)00461-6
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(2003) Author Index. Applied Surface Science, 216. doi:10.1016/s0169-4332(03)00784-0
Sumi, Akihiro, Takahashi, Kenji, Yokoyama, Shintaro, Morioka, Hitoshi, Funakubo, Hiroshi, Yoshimoto, Mamoru (2005) Metalorganic chemical vapor deposition of atomically flat SrRuO3 films on stepped SrTiO3 substrates. Applied Physics Letters, 87 (5). 52112pp. doi:10.1063/1.2006989
 
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