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Takahashi, H, Miyoshi, Y, Nakajima, F, Mohan, P, Motohisa, J, Fukui, T (2003) Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE. Applied Surface Science, 216. 402-406 doi:10.1016/s0169-4332(03)00458-6

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Reference TypeJournal (article/letter/editorial)
TitleFormation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE
JournalApplied Surface Science
AuthorsTakahashi, HAuthor
Miyoshi, YAuthor
Nakajima, FAuthor
Mohan, PAuthor
Motohisa, JAuthor
Fukui, TAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00458-6Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9905314Long-form Identifiermindat:1:5:9905314:3
GUID0
Full ReferenceTakahashi, H, Miyoshi, Y, Nakajima, F, Mohan, P, Motohisa, J, Fukui, T (2003) Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE. Applied Surface Science, 216. 402-406 doi:10.1016/s0169-4332(03)00458-6
Plain TextTakahashi, H, Miyoshi, Y, Nakajima, F, Mohan, P, Motohisa, J, Fukui, T (2003) Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE. Applied Surface Science, 216. 402-406 doi:10.1016/s0169-4332(03)00458-6
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Nakajima, F, Motohisa, J, Fukui, T (2000) Self-formed quantum nano-structures by selective area MOVPE and their application to GaAs single electron devices. Applied Surface Science, 162. 650-654 doi:10.1016/s0169-4332(00)00268-3
Motohisa, J., Nakajima, F., Fukui, T. (2002) Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications. Applied Surface Science, 190. 184-190 doi:10.1016/s0169-4332(01)00888-1
Takeda, Junichiro, Akabori, Masashi, Motohisa, Junichi, Fukui, Takashi (2002) Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE. Applied Surface Science, 190. 236-241 doi:10.1016/s0169-4332(01)00886-8
Tamura, H, Nomura, S, Yamaguchi, M, Akazaki, T, Takayanagi, H, Mohan, P, Motohisa, J, Fukui, T (2006) Magneto-Optics of GaAs Quantum Wire Lattices Grown by Selective-Area MOVPE. Journal of Physics: Conference Series, 38. 130-133 doi:10.1088/1742-6596/38/1/032
Kagiyama, T., Saito, Y., Otobe, K., Nakajima, S. (2003) Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation. Applied Surface Science, 216. 542-548 doi:10.1016/s0169-4332(03)00504-x
Fukui, Takashi, Nakajima, F, Kumakura, K, Motohisa, J (1999) Quantum dots fabricated by selective area MOVPE and their application to single electron devices. Bulletin of Materials Science, 22. 531-535 doi:10.1007/bf02749965
Bhunia, S., Kawamura, T., Watanabe, Y., Fujikawa, S., Matsui, J., Kagoshima, Y., Tsusaka, Y., Uchida, K., Sugiyama, N., Furiya, M., Nozaki, S., Morisaki, H. (2003) Real-time measurement of rocking curves during MOVPE growth of GaxIn1−xP/GaAs. Applied Surface Science, 216. 382-387 doi:10.1016/s0169-4332(03)00448-3
Tomioka, K., Mohan, P., Noborisaka, J., Hara, S., Motohisa, J., Fukui, T. (2007) Growth of highly uniform InAs nanowire arrays by selective-area MOVPE. Journal of Crystal Growth, 298. 644-647 doi:10.1016/j.jcrysgro.2006.10.183
Koizumi, A., Fujiwara, Y., Inoue, K., Yoshikane, T., Urakami, A., Takeda, Y. (2003) Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy. Applied Surface Science, 216. 560-563 doi:10.1016/s0169-4332(03)00512-9
Ohno, Takeo, Oyama, Yutaka, Tezuka, Kenji, Suto, Ken, Nishizawa, Jun-ichi (2003) Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions. Applied Surface Science, 216. 549-553 doi:10.1016/s0169-4332(03)00506-3
Kimura, Kenji, Nakajima, Kaoru (2003) Compositional transition layer in SiO2/Si interface observed by high-resolution RBS. Applied Surface Science, 216. 283-286 doi:10.1016/s0169-4332(03)00386-6
 
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