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Kochiya, Toshio, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-Ichi (2003) Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP. Applied Surface Science, 216. 78-82 doi:10.1016/s0169-4332(03)00478-1

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Reference TypeJournal (article/letter/editorial)
TitleAnisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP
JournalApplied Surface Science
AuthorsKochiya, ToshioAuthor
Oyama, YutakaAuthor
Suto, KenAuthor
Nishizawa, Jun-IchiAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00478-1Search in ResearchGate
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Mindat Ref. ID9905326Long-form Identifiermindat:1:5:9905326:8
GUID0
Full ReferenceKochiya, Toshio, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-Ichi (2003) Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP. Applied Surface Science, 216. 78-82 doi:10.1016/s0169-4332(03)00478-1
Plain TextKochiya, Toshio, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-Ichi (2003) Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP. Applied Surface Science, 216. 78-82 doi:10.1016/s0169-4332(03)00478-1
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Kochiya, Toshio, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-ichi (2004) Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface. Applied Surface Science, 237. 235-241 doi:10.1016/j.apsusc.2004.06.132
Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-Ichi (2003) Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy. Journal of Crystal Growth, 258 (1). 41-48 doi:10.1016/s0022-0248(03)01493-3
Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-ichi (2005) Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.10.144
Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-ichi (2002) Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (001) InP. Journal of Crystal Growth, 243 (2). 267-274 doi:10.1016/s0022-0248(02)01494-x
Oyama, Yutaka, Kochiya, Toshio, Suto, Ken, Nishizawa, Jun-ichi (2002) Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes. Journal of Crystal Growth, 245 (3). 181-192 doi:10.1016/s0022-0248(02)01644-5
Kochiya, Toshio, Oyama, Yutaka, Kimura, Toshihiro, Suto, Ken, Nishizawa, Jun-ichi (2005) Dislocation-free large area InP ELO layers by liquid phase epitaxy. Journal of Crystal Growth, 281 (2). 263-274 doi:10.1016/j.jcrysgro.2005.04.030
Ohno, Takeo, Oyama, Yutaka, Tezuka, Kenji, Suto, Ken, Nishizawa, Jun-ichi (2003) Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions. Applied Surface Science, 216. 549-553 doi:10.1016/s0169-4332(03)00506-3
Oyama, Yutaka, Suzuki, Takayuki, Suto, Ken, Nishizawa, Jun-Ichi (2001) Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP. Journal of Crystal Growth, 222 (1). 64-73 doi:10.1016/s0022-0248(00)00910-6
Sugai, Maki, Kochiya, Toshio, Oyama, Yutaka, Nishizawa, Jun-Ichi (2008) Selective epitaxy of InP on Si(100) substrates prepared by liquid-phase epitaxy. Journal of Physics and Chemistry of Solids, 69. 411-414 doi:10.1016/j.jpcs.2007.07.005
Oyama, Yutaka, Ohno, Takeo, Suto, Ken, Nishizawa, Jun-ichi (2005) Be doping in molecular layer epitaxy of GaAs. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.136
Saito, Takao, Oyama, Yutaka, Suto, Ken, Nishizawa, Jun-ichi, Tomoyuki Kimura, (2000) Excess ion density at the GaP/GaP liquid-phase epitaxial regrowth interface. Journal of Crystal Growth, 209 (4). 666-674 doi:10.1016/s0022-0248(99)00612-0
 
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