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Akazawa, Housei (2003) Short-period Si/Si1−xGex multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy. Applied Surface Science, 216. 554-559 doi:10.1016/s0169-4332(03)00510-5

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Reference TypeJournal (article/letter/editorial)
TitleShort-period Si/Si1−xGex multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy
JournalApplied Surface Science
AuthorsAkazawa, HouseiAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00510-5Search in ResearchGate
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Mindat Ref. ID9905355Long-form Identifiermindat:1:5:9905355:0
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Full ReferenceAkazawa, Housei (2003) Short-period Si/Si1−xGex multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy. Applied Surface Science, 216. 554-559 doi:10.1016/s0169-4332(03)00510-5
Plain TextAkazawa, Housei (2003) Short-period Si/Si1−xGex multiple quantum wells: real-time spectro-ellipsometric characterization during growth by synchrotron-radiation-excited chemical-beam epitaxy. Applied Surface Science, 216. 554-559 doi:10.1016/s0169-4332(03)00510-5
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Akazawa, Housei (2002) Spectro-ellipsometric monitoring and characterization of the growth of Si/Si1−xGex multiple quantum wells. Journal of Crystal Growth, 237. 393-397 doi:10.1016/s0022-0248(01)01861-9
Akazawa, Housei (2003) Short-period SinGem strained-layer superlattices grown from gas sources by synchrotron-radiation-excited chemical-beam epitaxy. Applied Physics Letters, 83 (3). 461-463 doi:10.1063/1.1593795
Akazawa, Housei (1996) Photoepitaxy of Si and Ge by synchrotron radiation. Applied Surface Science, 106. 211-222 doi:10.1016/s0169-4332(96)00403-5
Akazawa, Housei (1994) Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane. Applied Surface Science, 82. 394-399 doi:10.1016/0169-4332(94)90247-x
Akazawa, Housei (2018) Real-time spectro-ellipsometric approach to distinguish between two-dimensional Ge layer growth and Ge dot formation on SiO2 substrates. Applied Surface Science, 436. 887-892 doi:10.1016/j.apsusc.2017.12.120
Akazawa, Housei (1998) Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100). Applied Surface Science, 130. 292-297 doi:10.1016/s0169-4332(98)00073-7
Yoshigoe, Akitaka, Moritani, Kousuke, Teraoka, Yuden (2003) Real time observation of initial thermal oxidation using O2 gas on Si(0 0 1) surface by means of synchrotron radiation Si-2p photoemission spectroscopy. Applied Surface Science, 216. 388-394 doi:10.1016/s0169-4332(03)00451-3
Li, Mei-cheng, Zhao, Lian-cheng, Chen, Xue-kang (2003) Interfacial composition and electrical properties of PtSi/Si1−xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). Applied Surface Science, 219. 249-255 doi:10.1016/s0169-4332(03)00679-2
Akazawa, Housei (2002) Competing thermal relaxation processes in response to intrinsic defects produced by exposing SiO2 to synchrotron radiation. Applied Surface Science, 190. 26-29 doi:10.1016/s0169-4332(01)00875-3
Utsumi, Yuichi, Akazawa, Housei (1995) Origin of perfect selectivity of Si epitaxial growth through disilane molecular‐beam epitaxy using synchrotron radiation. Journal of Applied Physics, 77 (5). 2211-2213 doi:10.1063/1.358804
Akazawa, Housei (1997) Bistable Si growth conditions on Ge(100) in synchrotron-radiation-excited atomic layer epitaxy from SiH2Cl2. Journal of Applied Physics, 81 (7). 3320-3322 doi:10.1063/1.364317
 
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