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Tan, Ruiqin, Azuma, Yasushi, Kojima, Isao (2004) Suppression of interfacial diffusion by a predeposited Hf metal layer on SiO2/Si. Applied Surface Science, 222. 346-350 doi:10.1016/j.apsusc.2003.09.003

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Reference TypeJournal (article/letter/editorial)
TitleSuppression of interfacial diffusion by a predeposited Hf metal layer on SiO2/Si
JournalApplied Surface Science
AuthorsTan, RuiqinAuthor
Azuma, YasushiAuthor
Kojima, IsaoAuthor
Year2004 (January)Volume222
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2003.09.003Search in ResearchGate
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Mindat Ref. ID9905652Long-form Identifiermindat:1:5:9905652:0
GUID0
Full ReferenceTan, Ruiqin, Azuma, Yasushi, Kojima, Isao (2004) Suppression of interfacial diffusion by a predeposited Hf metal layer on SiO2/Si. Applied Surface Science, 222. 346-350 doi:10.1016/j.apsusc.2003.09.003
Plain TextTan, Ruiqin, Azuma, Yasushi, Kojima, Isao (2004) Suppression of interfacial diffusion by a predeposited Hf metal layer on SiO2/Si. Applied Surface Science, 222. 346-350 doi:10.1016/j.apsusc.2003.09.003
In(n.d.) Applied Surface Science Vol. 222. Elsevier BV

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Tan, Ruiqin, Azuma, Yasushi, Kojima, Isao (2005) Influence of thickness of Hf buffer layer on the interfacial structures of sputtered HfO2 on SiO2/Si. Applied Surface Science, 244. 21-25 doi:10.1016/j.apsusc.2004.10.061
Tan, Ruiqin, Azuma, Yasushi, Kojima, Isao (2005) X-ray photoelectron spectroscopic analysis of HfO2/Hf/SiO2/Si structure. Applied Surface Science, 241. 135-140 doi:10.1016/j.apsusc.2004.09.030
Tan, Ruiqin, Azuma, Yasushi, Kojima, Isao (2006) Comparative study of the interfacial characteristics of sputter-deposited HfO2 on native SiO2/Si (100) usingin situ XPS, AES and GIXR. Surface and Interface Analysis, 38 (4). 784-788 doi:10.1002/sia.2263
Song, Weijie, Yoshitake, Michiko, Tan, Ruiqin, Kojima, Isao (2007) Band bending and band alignment at HfO 2 /HfSi x O y /Si interfaces. Applied Surface Science, 253. 3508-3511 doi:10.1016/j.apsusc.2006.07.054
Tan, R. Q., Azuma, Y., Fujimoto, T., Fan, J. W., Kojima, I. (2004) Preparation of ultrathin HfO2 films and comparison of HfO2/SiO2/Si interfacial structures. Surface and Interface Analysis, 36 (8). 1007-1010 doi:10.1002/sia.1824
Zhang, Lulu, Terauchi, Shin-ya, Tan, Ruiqin, Azuma,, Yasushi, Fujimoto, Toshiyuki (2007) Study of interfacial structure of HfO2thin film on Si by grazing incidence x-ray reflectivity. Journal of Physics: Conference Series, 83. 12032pp. doi:10.1088/1742-6596/83/1/012032
Azuma, Yasushi, Fan, Jiangwei, Kojima, Isao, Wei, Shiqiang (2005) Physical structures of SiO2 ultrathin films probed by grazing incidence x-ray reflectivity. Journal of Applied Physics, 97 (12). 123522pp. doi:10.1063/1.1941469
Azuma, Yasushi, Fujimoto, Toshiyuki, Kojima, Isao (2005) Cleaning Method for Thickness Metrology of SiO2Thin Films on Si Substrates by Heating in Atmosphere. Japanese Journal of Applied Physics, 44 (11) 8256-8258 doi:10.1143/jjap.44.8256
KOJIMA, Isao, AZUMA, Yasushi, XU, Junhua, SAITOU, Takayuki, YONEKUBO, So, SHIMOSATO, Naoko (2002) Round Robin Test for Depth Profiling of SiO2/Si Multilayer. Analytical Sciences, 18 (12). 1395-1398 doi:10.2116/analsci.18.1395
Suominen, T, Paturi, P, Huhtinen, H, Heikkilä, L, Hedman, H.-P, Punkkinen, R, Laiho, R (2004) Conductivity and distribution of charge on electroluminescent Si/SiO2 structures investigated by electrostatic force microscopy. Applied Surface Science, 222. 131-137 doi:10.1016/j.apsusc.2003.08.004
Tero, R., Takizawa, M., Li, Y.J., Yamazaki, M., Urisu, T. (2004) Deposition of phospholipid layers on SiO2 surface modified by alkyl-SAM islands. Applied Surface Science, 238. 218-222 doi:10.1016/j.apsusc.2004.05.203
 
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