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Li, J.F., Sun, X.W., Yu, M.B., Qi, G.J., Zeng, X.T. (2005) Nickel induced lateral crystallization behavior of amorphous silicon films. Applied Surface Science, 240. 155-160 doi:10.1016/j.apsusc.2004.06.115

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Reference TypeJournal (article/letter/editorial)
TitleNickel induced lateral crystallization behavior of amorphous silicon films
JournalApplied Surface Science
AuthorsLi, J.F.Author
Sun, X.W.Author
Yu, M.B.Author
Qi, G.J.Author
Zeng, X.T.Author
Year2005 (February)Volume240
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2004.06.115Search in ResearchGate
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Mindat Ref. ID9906974Long-form Identifiermindat:1:5:9906974:6
GUID0
Full ReferenceLi, J.F., Sun, X.W., Yu, M.B., Qi, G.J., Zeng, X.T. (2005) Nickel induced lateral crystallization behavior of amorphous silicon films. Applied Surface Science, 240. 155-160 doi:10.1016/j.apsusc.2004.06.115
Plain TextLi, J.F., Sun, X.W., Yu, M.B., Qi, G.J., Zeng, X.T. (2005) Nickel induced lateral crystallization behavior of amorphous silicon films. Applied Surface Science, 240. 155-160 doi:10.1016/j.apsusc.2004.06.115
In(n.d.) Applied Surface Science Vol. 240. Elsevier BV

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Svyetlichnyy, Dmytro, Kryshtal, Aleksandr (2020) Lattice Boltzmann simulation of metal-induced crystallization of amorphous semiconductor films. Applied Surface Science, 515. 146090pp. doi:10.1016/j.apsusc.2020.146090
Rao, R., Sun, G.C. (2004) Microwave annealing enhances Al-induced lateral crystallization of amorphous silicon thin films. Journal of Crystal Growth, 273 (1). 68-73 doi:10.1016/j.jcrysgro.2004.07.089
Kryshtal, Aleksandr, Bogatyrenko, Sergiy, Ferreira, Paulo (2022) Metal-induced crystallization of amorphous semiconductor films: Nucleation phenomena in Ag-Ge films. Applied Surface Science, 606. 154873 doi:10.1016/j.apsusc.2022.154873
Wang, T., Yan, H., Zhang, M., Song, X., Pan, Q., He, T., Hu, Z., Jia, H., Mai, Y. (2013) Polycrystalline silicon thin films by aluminum induced crystallization of amorphous silicon. Applied Surface Science, 264. 11-16 doi:10.1016/j.apsusc.2012.09.019
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