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Pakarinen, J., Polojärvi, V., Laukkanen, P., Tukiainen, A., Laakso, A., Peng, C.S., Tuomisto, P., Korpijärvi, V.-M., Puustinen, J., Pessa, M. (2008) An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study. Applied Surface Science, 255. 2985-2988 doi:10.1016/j.apsusc.2008.08.062

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Reference TypeJournal (article/letter/editorial)
TitleAn effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study
JournalApplied Surface Science
AuthorsPakarinen, J.Author
Polojärvi, V.Author
Laukkanen, P.Author
Tukiainen, A.Author
Laakso, A.Author
Peng, C.S.Author
Tuomisto, P.Author
Korpijärvi, V.-M.Author
Puustinen, J.Author
Pessa, M.Author
Year2008 (December)Volume255
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2008.08.062Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9913834Long-form Identifiermindat:1:5:9913834:7
GUID0
Full ReferencePakarinen, J., Polojärvi, V., Laukkanen, P., Tukiainen, A., Laakso, A., Peng, C.S., Tuomisto, P., Korpijärvi, V.-M., Puustinen, J., Pessa, M. (2008) An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study. Applied Surface Science, 255. 2985-2988 doi:10.1016/j.apsusc.2008.08.062
Plain TextPakarinen, J., Polojärvi, V., Laukkanen, P., Tukiainen, A., Laakso, A., Peng, C.S., Tuomisto, P., Korpijärvi, V.-M., Puustinen, J., Pessa, M. (2008) An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study. Applied Surface Science, 255. 2985-2988 doi:10.1016/j.apsusc.2008.08.062
In(n.d.) Applied Surface Science Vol. 255. Elsevier BV

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