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Zhang, Xiangqiang, Hou, Shili, Mao, Huibing, Wang, Jiqing, Zhu, Ziqiang (2010) Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots. Applied Surface Science, 256. 3862-3865 doi:10.1016/j.apsusc.2010.01.041

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of annealing temperature on the photoluminescence properties of ZnO quantum dots
JournalApplied Surface Science
AuthorsZhang, XiangqiangAuthor
Hou, ShiliAuthor
Mao, HuibingAuthor
Wang, JiqingAuthor
Zhu, ZiqiangAuthor
Year2010 (April)Volume256
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.01.041Search in ResearchGate
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Mindat Ref. ID9914433Long-form Identifiermindat:1:5:9914433:9
GUID0
Full ReferenceZhang, Xiangqiang, Hou, Shili, Mao, Huibing, Wang, Jiqing, Zhu, Ziqiang (2010) Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots. Applied Surface Science, 256. 3862-3865 doi:10.1016/j.apsusc.2010.01.041
Plain TextZhang, Xiangqiang, Hou, Shili, Mao, Huibing, Wang, Jiqing, Zhu, Ziqiang (2010) Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots. Applied Surface Science, 256. 3862-3865 doi:10.1016/j.apsusc.2010.01.041
In(n.d.) Applied Surface Science Vol. 256. Elsevier BV

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