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Chen, Chengzhao, Zhou, Zhiwen, Chen, Yanghua, Li, Cheng, Lai, Hongkai, Chen, Songyan (2010) Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature. Applied Surface Science, 256. 6936-6940 doi:10.1016/j.apsusc.2010.04.076

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Reference TypeJournal (article/letter/editorial)
TitleThermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature
JournalApplied Surface Science
AuthorsChen, ChengzhaoAuthor
Zhou, ZhiwenAuthor
Chen, YanghuaAuthor
Li, ChengAuthor
Lai, HongkaiAuthor
Chen, SongyanAuthor
Year2010 (September)Volume256
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.04.076Search in ResearchGate
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Mindat Ref. ID9914982Long-form Identifiermindat:1:5:9914982:0
GUID0
Full ReferenceChen, Chengzhao, Zhou, Zhiwen, Chen, Yanghua, Li, Cheng, Lai, Hongkai, Chen, Songyan (2010) Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature. Applied Surface Science, 256. 6936-6940 doi:10.1016/j.apsusc.2010.04.076
Plain TextChen, Chengzhao, Zhou, Zhiwen, Chen, Yanghua, Li, Cheng, Lai, Hongkai, Chen, Songyan (2010) Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature. Applied Surface Science, 256. 6936-6940 doi:10.1016/j.apsusc.2010.04.076
In(n.d.) Applied Surface Science Vol. 256. Elsevier BV

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Qi, Dongfeng, Liu, Hanhui, Chen, Songyan, Li, Cheng, Lai, Hongkai (2013) Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate. Journal of Crystal Growth, 375. 115-118 doi:10.1016/j.jcrysgro.2013.04.021
Li, Cheng, Chen, Yanghua, Zhou, Zhiwen, Lai, Hongkai, Chen, Songyan (2009) Enhanced photoluminescence of strained Ge with a Ī“-doping SiGe layer on silicon and silicon-on-insulator. Applied Physics Letters, 95 (25). 251102pp. doi:10.1063/1.3275863
Chen, Chengzhao, Liao, Linghong, Li, Cheng, Lai, Hongkai, Chen, Songyan (2011) Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density. Applied Surface Science, 257. 2818-2821 doi:10.1016/j.apsusc.2010.10.068
Zhou, Zhiwen, Cai, Zhimeng, Li, Cheng, Lai, Hongkai, Chen, Songyan, Yu, Jinzhong (2008) Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD. Applied Surface Science, 255. 2660-2664 doi:10.1016/j.apsusc.2008.07.179
Chen, Yanghua, Li, Cheng, Zhou, Zhiwen, Lai, Hongkai, Chen, Songyan, Ding, Wuchang, Cheng, Buwen, Yu, Yude (2009) Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate. Applied Physics Letters, 94 (14). 141902pp. doi:10.1063/1.3114408
Cai, Kunhuang, Li, Cheng, Zhang, Yong, Xu, Jianfang, Lai, Hongkai, Chen, Songyan (2008) Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer. Applied Surface Science, 254. 5363-5366 doi:10.1016/j.apsusc.2008.02.075
Zhou, Zhiwen, Li, Cheng, Lai, Hongkai, Chen, Songyan, Yu, Jinzhong (2008) The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition. Journal of Crystal Growth, 310 (10). 2508-2513 doi:10.1016/j.jcrysgro.2008.01.016
Zhou, Zhiwen, Li, Cheng, Chen, Songyan, Lai, Hongkai, Yu, Jinzhong (2008) Comment on ā€œUse of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1āˆ’x metamorphic buffer layer for the growth of Ge layer on Si substrateā€ [Appl. Phys. Lett. 90, 083507 (2007)]. Applied Physics Letters, 93 (15). 156102pp. doi:10.1063/1.3003873
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