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Lian, Derming (2010) Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films. Applied Surface Science, 257. 911-916 doi:10.1016/j.apsusc.2010.07.089

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Reference TypeJournal (article/letter/editorial)
TitleEffect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films
JournalApplied Surface Science
AuthorsLian, DermingAuthor
Year2010 (November)Volume257
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.07.089Search in ResearchGate
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Mindat Ref. ID9916832Long-form Identifiermindat:1:5:9916832:0
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Full ReferenceLian, Derming (2010) Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films. Applied Surface Science, 257. 911-916 doi:10.1016/j.apsusc.2010.07.089
Plain TextLian, Derming (2010) Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films. Applied Surface Science, 257. 911-916 doi:10.1016/j.apsusc.2010.07.089
In(n.d.) Applied Surface Science Vol. 257. Elsevier BV

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